是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, S-PDSO-N8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 7.43 | Is Samacsys: | N |
其他特性: | LOW NOISE | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 7 V |
最大漏极电流 (Abs) (ID): | 1 A | 最大漏极电流 (ID): | 1 A |
FET 技术: | HIGH ELECTRON MOBILITY | 最高频带: | L BAND |
JEDEC-95代码: | MO-229 | JESD-30 代码: | S-PDSO-N8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 3.5 W |
最小功率增益 (Gp): | 13.5 dB | 认证状态: | Not Qualified |
子类别: | FET RF Small Signal | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
ATF-501P8-TR1 | HP | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa |
获取价格 |
|
ATF-501P8-TR1 | AGILENT | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa |
获取价格 |
|
ATF-501P8-TR2 | AGILENT | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa |
获取价格 |
|
ATF-501P8-TR2 | HP | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa |
获取价格 |
|
ATF-501P8-TR2G | AGILENT | 暂无描述 |
获取价格 |
|
ATF-511P8 | AGILENT | High Linearity Enhancement Mode |
获取价格 |
|
ATF-511P8-BLK | AGILENT | High Linearity Enhancement Mode |
获取价格 |
|
ATF-511P8-BLKG | AGILENT | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob |
获取价格 |
|
ATF-511P8-TR1 | AGILENT | High Linearity Enhancement Mode |
获取价格 |
|
ATF-511P8-TR1G | AGILENT | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob |
获取价格 |