ATF-511P8-TR1

更新时间： 2024-11-30 02:54:55

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
16页	140K
描述
High Linearity Enhancement Mode

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中文翻译

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数据手册

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ATF-511P8-TR1 数据手册

Agilent ATF-511P8 High Linearity

Enhancement Mode^[1]

Pseudomorphic HEMT in

2x2 mm²LPCC^[3]Package

Data Sheet

Features

• Single voltage operation

• High linearity and P1dB

• Low noise figure

Pin Connections and

Package Marking

Description

Agilent Technologies’s

• Excellent uniformity in product

specifications

ATF-511P8 is a single-voltage

high linearity, low noise

E-pHEMT housed in an 8-lead

JEDEC-standard leadless

plastic chip carrier (LPCC^[3])

package. The device is ideal as

a high linearity, low-noise,

medium-power amplifier. Its

operating frequency range is

from 50 MHz to 6 GHz.

• Small package size:

Pin 8

Pin 7 (Drain)

Pin 6

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

2.0 x 2.0 x 0.75 mm

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

Pin 5

Pin 4 (Source)

• Tape-and-reel packaging option

available

Bottom View

Pin 1 (Source)

Pin 8

Specifications

The thermally efficient package

measures only 2 mm x 2 mm x

0.75 mm. Its backside

2 GHz; 4.5V, 200 mA (Typ.)

Pin 2 (Gate)

Pin 3

Pin 7 (Drain)

Pin 6

1Px

• 41.7 dBm output IP3

metalizationprovides excellent

thermal dissipation as well as

visual evidence of solder reflow.

The device has a Point MTTF of

over 300 years at a mounting

temperature of +85°C. All

• 30 dBm output power at 1 dB gain

compression

Pin 4 (Source)

Pin 5

Top View

Note:

• 1.4 dB noise figure

• 14.8 dB gain

Package marking provides orientation and

identification:

“1P” = Device Code

• 12.1 dB LFOM^[4]

• 69% PAE

devices are 100% RF & DC tested.

“x” = Date code indicates the month of

manufacture.

Note:

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

Applications

• Front-end LNA Q2 and Q3 driver or

pre-driver amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

2. Refer to reliability datasheet for detailed

MTTF data.

3. Conforms to JEDEC reference outline MO229

for DRP-N.

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

• Driver amplifier for WLAN,

WLL/RLL and MMDS applications

• General purpose discrete E-pHEMT

for other high linearity applications

12 3 4 5 6 7...16

中文翻译

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与ATF-511P8-TR1相关器件

型号	品牌	获取价格	描述	数据表
ATF-511P8-TR1G	AGILENT	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob
ATF-511P8-TR2	AGILENT	获取价格	High Linearity Enhancement Mode
ATF-511P8-TR2G	AGILENT	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob
ATF514	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF514S12A	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF515	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF515S12L	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF-52189-BLK	AGILENT	获取价格	Enhancement Mode Pseudomorphic HEMT in SOT 89 Package
ATF-52189-BLK	AVAGO	获取价格	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE PACKAGE-3
ATF-52189-BLKG	AVAGO	获取价格	RF SMALL SIGNAL, FET

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