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ATF-52189-TR1

更新时间： 2024-01-17 16:30:30

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
14页	145K
描述
Enhancement Mode Pseudomorphic HEMT in SOT 89 Package

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中文翻译

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技术参数
数据手册

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ATF-52189-TR1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

ATF-52189-TR1 数据手册

Agilent ATF-53189 Enhancement

Mode^[1]Pseudomorphic HEMT

in SOT 89 Package

Data Sheet

Features

• Single voltage operation

• High Linearity and Gain

• Low Noise Figure

• Excellent uniformity in product

specifications

• SOT 89 standard package

Pin Connections and

Package Marking

Description

Agilent Technologies’s

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

ATF-53189 is a single-voltage

high linearity, low noise

E-pHEMT FET packaged in a

low cost surface mount SOT89

package. The device is ideal as a

high-linearity, low noise,

medium-power amplifier. Its

operating frequency range is

from 50 MHz to 6 GHz.

• Tape-and-Reel packaging option

available

3GX

Specifications

2 GHz, 4.0V, 135 mA (Typ.)

• 40.0 dBm Output IP3

Top View

• 23.0 dBm Output Power at 1dB gain

compression

ATF-53189 is ideally suited for

Cellular/PCS and WCDMA

wireless infrastructure, WLAN,

WLL and MMDS application, and

general purpose discrete

E-pHEMT amplifiers which

require medium power and high

linearity. All devices are 100% RF

and DC tested.

• 0.85 dB Noise Figure

• 15.5 dB Gain

• 46% PAE at P1dB

• LFOM^[3]12.7 dB

Bottom View

Applications

Notes:

• Front-end LNA Q1 and Q2, Driver or

Pre-driver Amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

Package marking provides orientation and

identification:

“3G” = Device Code

“x” = Month code indicates the month of

manufacture.

• Driver Amplifier for WLAN, WLL/

RLL and MMDS applications

D = Drain

S = Source

G = Gate

• General purpose discrete E-pHEMT

for other high linearity applications

Notes:

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

2. Refer to reliability datasheet for detailed

MTTF data.

3. Linearity Figure of Merit (LFOM) is OIP3

divided by DC bias power.

12 3 4 5 6 7...14

中文翻译

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