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ATF-521P8-TR1G PDF预览

ATF-521P8-TR1G

更新时间： 2024-11-30 14:47:51
品牌 Logo 应用领域
安捷伦 - AGILENT 放大器PC光电二极管晶体管
页数 文件大小 规格书
24页 248K
描述
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8

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ATF-521P8-TR1G 技术参数

生命周期：Transferred零件包装代码：SON
包装说明：SMALL OUTLINE, S-PDSO-N8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.11其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：7 V最大漏极电流 (ID)：0.5 A
FET 技术：HIGH ELECTRON MOBILITY最高频带：C BAND
JEDEC-95代码：MO-229JESD-30 代码：S-PDSO-N8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：15.5 dB
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

ATF-521P8-TR1G 数据手册

 浏览型号ATF-521P8-TR1G的Datasheet PDF文件第2页浏览型号ATF-521P8-TR1G的Datasheet PDF文件第3页浏览型号ATF-521P8-TR1G的Datasheet PDF文件第4页浏览型号ATF-521P8-TR1G的Datasheet PDF文件第5页浏览型号ATF-521P8-TR1G的Datasheet PDF文件第6页浏览型号ATF-521P8-TR1G的Datasheet PDF文件第7页 
Agilent ATF-521P8 High Linearity  
Enhancement Mode[1]  
Pseudomorphic HEMT in  
2x2 mm2 LPCC[3] Package  
Data Sheet  
Features  
• Single voltage operation  
• High linearity and P1dB  
• Low noise figure  
Pin Connections and  
Package Marking  
Description  
• Excellent uniformity in product  
specifications  
Agilent Technologies’s ATF-521P8 is a  
single-voltage high linearity, low noise  
E-pHEMT housed in an 8-lead JEDEC-  
standard leadless plastic chip carrier  
(LPCC[3]) package. The device is ideal  
as a medium-power, high-linearity am-  
plifier. Its operating frequency range  
is from 50 MHz to 6 GHz.  
Pin 8  
Pin 7 (Drain)  
Pin 6  
Pin 1 (Source)  
Pin 2 (Gate)  
Pin 3  
• Small package size:  
2.0 x 2.0 x 0.75 mm3  
• Point MTTF > 300 years[2]  
• MSL-1 and lead-free  
Pin 5  
Pin 4 (Source)  
Bottom View  
• Tape-and-reel packaging option  
The thermally efficient package mea-  
sures only 2mm x 2mm x 0.75mm. Its  
backside metalization provides excel-  
lent thermal dissipation as well as vi-  
sual evidence of solder reflow. The  
device has a Point MTTF of over 300  
years at a mounting temperature of  
+85°C. All devices are 100% RF & DC  
tested.  
available  
Pin 1 (Source)  
Pin 8  
Specifications  
Pin 2 (Gate)  
Pin 3  
Pin 7 (Drain)  
Pin 6  
2Px  
2 GHz; 4.5V, 200 mA (Typ.)  
• 42 dBm output IP3  
Pin 4 (Source)  
Pin 5  
Top View  
• 26.5 dBm output power at 1 dB gain  
compression  
Note:  
Package marking provides orientation and  
identification  
• 1.5 dB noise figure  
• 17 dB Gain  
“2P” = Device Code  
• 12.5 dB LFOM[4]  
“x” = Month code indicates the month of  
manufacture.  
Note:  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
Applications  
• Front-end LNA Q2 and Q3, driver or  
pre-driver amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
2. Refer to reliability datasheet for detailed  
MTTF data  
3. Conform to JEDEC reference outline MO229  
for DRP-N  
4. Linearity Figure of Merit (LFOM) is essentially  
OIP3 divided by DC bias power.  
• Driver amplifier for WLAN,  
WLL/RLL and MMDS applications  
• General purpose discrete E-pHEMT  
for other high linearity applications  
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