Datasheet > ATF-521P8-TR1G

ATF-521P8-TR1G

更新时间： 2024-01-29 19:09:46

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器 PC 光电二极管晶体管
页数	文件大小	规格书
24页	248K
描述
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8

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ATF-521P8-TR1G 技术参数

生命周期：	Transferred	零件包装代码：	SON
包装说明：	SMALL OUTLINE, S-PDSO-N8	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.11	其他特性：	LOW NOISE
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	7 V	最大漏极电流 (ID)：	0.5 A
FET 技术：	HIGH ELECTRON MOBILITY	最高频带：	C BAND
JEDEC-95代码：	MO-229	JESD-30 代码：	S-PDSO-N8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	15.5 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

ATF-521P8-TR1G 数据手册

Agilent ATF-521P8 High Linearity

Enhancement Mode^[1]

Pseudomorphic HEMT in

2x2 mm²LPCC^[3]Package

Data Sheet

Features

• Single voltage operation

• High linearity and P1dB

• Low noise figure

Pin Connections and

Package Marking

Description

• Excellent uniformity in product

specifications

Agilent Technologies’s ATF-521P8 is a

single-voltage high linearity, low noise

E-pHEMT housed in an 8-lead JEDEC-

standard leadless plastic chip carrier

(LPCC^[3]) package. The device is ideal

as a medium-power, high-linearity am-

plifier. Its operating frequency range

is from 50 MHz to 6 GHz.

Pin 8

Pin 7 (Drain)

Pin 6

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

• Small package size:

2.0 x 2.0 x 0.75 mm³

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

Pin 5

Pin 4 (Source)

Bottom View

• Tape-and-reel packaging option

The thermally efficient package mea-

sures only 2mm x 2mm x 0.75mm. Its

backside metalization provides excel-

lent thermal dissipation as well as vi-

sual evidence of solder reflow. The

device has a Point MTTF of over 300

years at a mounting temperature of

+85°C. All devices are 100% RF & DC

tested.

available

Pin 1 (Source)

Pin 8

Specifications

Pin 2 (Gate)

Pin 3

Pin 7 (Drain)

Pin 6

2Px

2 GHz; 4.5V, 200 mA (Typ.)

• 42 dBm output IP3

Pin 4 (Source)

Pin 5

Top View

• 26.5 dBm output power at 1 dB gain

compression

Note:

Package marking provides orientation and

identification

• 1.5 dB noise figure

• 17 dB Gain

“2P” = Device Code

• 12.5 dB LFOM^[4]

“x” = Month code indicates the month of

manufacture.

Note:

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

Applications

• Front-end LNA Q2 and Q3, driver or

pre-driver amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

2. Refer to reliability datasheet for detailed

MTTF data

3. Conform to JEDEC reference outline MO229

for DRP-N

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

• Driver amplifier for WLAN,

WLL/RLL and MMDS applications

• General purpose discrete E-pHEMT

for other high linearity applications

12 3 4 5 6 7...24

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