Datasheet > ATF527

ATF527

更新时间： 2022-02-26 12:47:18

品牌	Logo	应用领域
POSEICO		开关
页数	文件大小	规格书
3页	86K
描述
FAST SWITCHING THYRISTOR

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数据手册

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ATF527 数据手册

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

FAST SWITCHING THYRISTOR

ATF527

Repetitive voltage up to

Mean on-state current

Surge current

1400

1230

15 kA

25 µs

FINAL SPECIFICATION

apr 07 - ISSUE : 0

Turn-off time

[

]

Symbol

Characteristic

Conditions

Value

Unit

BLOCKING

RRM

RSM

DRM

RRM

DRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak off-state voltage

Repetitive peak reverse current

Repetitive peak off-state current

125

1400

1500

1400

V=VRRM

V=VDRM

CONDUCTING

T (AV)

TSM

Mean on-state current

180°sin, 50 Hz, Th=55°C, doub le side cooled

180°sin, 1 kHz,T h=55°C, doub le side cooled

sine wave, 10 ms

1230

Mean on-state current

Surge on-state current, non repetitive

I² t

1110

125

14,6

I² t

without reverse voltage

1066 x1E3

1,92

A²s

On-state voltage

On-state current =

2000 A

125

T(TO)

Threshold voltage

1,40

On-state slope resistance

125 0,260

mohm

SWITCHING

di/dt

dv/dt

Critical rate of rise of on-state current, min

Critical rate of rise of off-state voltage, min

Gate controlled delay time, typical

From 75% VDRM up to 2000 A, gate 20V 10 ohm

Linear ramp up to 70% of VDRM

125

800

500

1,5

A/µs

V/µs

µs

VD=100V, gate source 20V, 10 ohm , tr=1 µs

Circuit commutated turn-off time

di/dt = 20

A/µs, I I = 800

125

µs

dV/dt = 200 V/µs , up to 75% VDRM

Q rr

I rr

Reverse recovery charge

Peak reverse recovery current

Holding current, typical

di/dt = 60

VR = 50

A/µs, I I = 1000

125

650

230

µC

VD=5V, gate open circuit

VD=5V, tp=30µs

Latching current, typical

230

GATE

Gate trigger voltage

VD=5V

125

3,5

350

0,25

Gate trigger current

VD=5V

Non-trigger gate voltage, min.

Peak gate voltage (forward)

Peak gate current

VD=VDRM

FGM

RGM

Peak gate voltage (reverse)

Peak gate power dissipation

Average gate power dissipation

Pulse width 100 µs

150

G(AV)

MOUNTING

th(j-h)

Thermal impedance, DC

Junction to heatsink, double side cooled

°C/kW

°C

Operating junction temperature

Mounting force

-30 / 125

14.0 / 17.0

500

Mass

tq code

D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs

M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs

T 60 µs U 70 µs W 80 µs X 100µs Y 150µs

tq code

ORDERING INFORMATION : ATF527 S 14 M

VDRM&VRRM/100

standard specification

12 3

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