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ATF-54143-BLK PDF预览

ATF-54143-BLK

更新时间: 2024-01-04 02:47:13
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体晶体管光电二极管放大器
页数 文件大小 规格书
16页 155K
描述
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-54143-BLK 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:7.66
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:5 V
最大漏极电流 (Abs) (ID):0.12 A最大漏极电流 (ID):0.12 A
FET 技术:HIGH ELECTRON MOBILITY最高频带:C BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:0.725 W最小功率增益 (Gp):15 dB
认证状态:Not Qualified子类别:FET RF Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

ATF-54143-BLK 数据手册

 浏览型号ATF-54143-BLK的Datasheet PDF文件第2页浏览型号ATF-54143-BLK的Datasheet PDF文件第3页浏览型号ATF-54143-BLK的Datasheet PDF文件第4页浏览型号ATF-54143-BLK的Datasheet PDF文件第5页浏览型号ATF-54143-BLK的Datasheet PDF文件第6页浏览型号ATF-54143-BLK的Datasheet PDF文件第7页 
Agilent ATF-54143 Low Noise  
Enhancement Mode  
Pseudomorphic HEMT in a  
Surface Mount Plastic Package  
Data Sheet  
Features  
• High linearity performance  
• Enhancement Mode Technology[1]  
• Low noise figure  
• Excellent uniformity in product  
specifications  
• 800 micron gate width  
Surface Mount Package  
Description  
SOT-343  
Agilent Technologies’s ATF-54143  
is a high dynamic range, low  
noise, E-PHEMT housed in a  
4-lead SC-70 (SOT-343) surface  
mount plastic package.  
• Low cost surface mount small  
plastic package SOT-343 (4 lead  
SC-70)  
• Tape-and-Reel packaging option  
available  
The combination of high gain,  
high linearity and low noise  
makes the ATF-54143 ideal for  
cellular/PCS base stations,  
MMDS, and other systems in the  
450 MHz to 6 GHz frequency  
range.  
Specifications  
2 GHz; 3 V, 60 mA (Typ.)  
Pin Connections and  
• 36.2 dBm output 3rd order intercept  
Package Marking  
• 20.4 dBm output power at 1 dB  
gain compression  
DRAIN  
SOURCE  
• 0.5 dB noise figure  
SOURCE  
GATE  
• 16.6 dB associated gain  
Note:  
Applications  
• Low noise amplifier for cellular/  
PCS base stations  
Top View. Package marking provides orientation  
and identification  
“4F” = Device Code  
• LNA for WLAN, WLL/RLL and  
MMDS applications  
“x” = Date code character  
identifies month of manufacture.  
• General purpose discrete E-PHEMT  
for other ultra low noise applications  
Note:  
1. Enhancement mode technology requires  
positive Vgs, thereby eliminating the need for  
the negative gate voltage associated with  
conventional depletion mode devices.  

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