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ATF-541M4-TR2G PDF预览

ATF-541M4-TR2G

更新时间: 2024-12-01 13:05:43
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体晶体管放大器
页数 文件大小 规格书
16页 166K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4

ATF-541M4-TR2G 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:CHIP CARRIER, R-CBCC-N4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.11Is Samacsys:N
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:5 V最大漏极电流 (ID):0.12 A
FET 技术:HIGH ELECTRON MOBILITY最高频带:X BAND
JESD-30 代码:R-CBCC-N4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最小功率增益 (Gp):15.5 dB
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

ATF-541M4-TR2G 数据手册

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Agilent ATF-541M4 Low Noise  
Enhancement Mode  
Pseudomorphic HEMT in a  
Miniature Leadless Package  
Data Sheet  
Features  
• High linearity performance  
• Single Supply Enhancement Mode  
Technology[1]  
• Very low noise figure  
• Excellent uniformity in product  
specifications  
MiniPak 1.4 mm x 1.2 mm Package  
Description  
• 800 micron gate width  
Agilent Technologies’s  
ATF-541M4 is a high linearity,  
low noise, single supply  
E-PHEMT housed in a miniature  
leadless package.  
• Miniature leadless package  
1.4 mm x 1.2 mm x 0.7 mm  
• Tape-and-Reel packaging option  
available  
The ATF-541M4’s small size and  
low profile makes it ideal for the  
design of hybrid module and  
other space-constraint devices.  
Specifications  
2 GHz; 3V, 60 mA (Typ.)  
• 35.8 dBm output 3rd order intercept  
Pin Connections and  
Package Marking  
• 21.4 dBm output power at 1 dB gain  
compression  
The device can be used in appli-  
cations such as TMA and front  
end LNA for Cellular/PCS and  
WCDMA base stations, LNA and  
driver amplifiers for Wireless  
Data and 802.11b WLAN.  
Drain  
Pin 4  
Source  
Pin 3  
• 0.5 dB noise figure  
Rx  
• 17.5 dB associated gain  
Gate  
Pin 2  
Source  
Pin 1  
Applications  
• Low Noise Amplifier and Driver  
Amplifier for Cellular/PCS and  
WCDMA Base Stations  
Note:  
In addition, the device’s superior  
RF performance at higher  
Top View. Package marking provides orientation,  
product identification and date code.  
frequency makes it an ideal  
candidate for high frequency  
applications such as WLL,  
802.11a WLAN, 5–6 GHz UNII  
and HIPERLAN applications.  
• LNA and Driver Amplifier for  
WLAN, WLL/RLL and MMDS  
applications  
“R” = Device Type Code  
“x” = Date code character. A different  
character is assigned for each month and  
year.  
General purpose discrete E-PHEMT  
for ultra low noise applications in  
the 450 MHz to 10 GHz frequency  
range  
Note:  
1. Enhancement mode technology requires  
positive Vgs, thereby eliminating the need for  
the negative gate voltage associated with  
conventional depletion mode devices.  

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