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ATF-551M4-BLK

更新时间： 2024-02-13 05:10:13

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
24页	198K
描述
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package

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ATF-551M4-BLK 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	CHIP CARRIER, R-CBCC-N4	针数：	4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.25	其他特性：	LOW NOISE
配置：	SINGLE	最小漏源击穿电压：	5 V
最大漏极电流 (ID)：	0.1 A	FET 技术：	HIGH ELECTRON MOBILITY
最高频带：	X BAND	JESD-30 代码：	R-CBCC-N4
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最小功率增益 (Gp)：	15.5 dB	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN
端子形式：	NO LEAD	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

ATF-551M4-BLK 数据手册

Agilent ATF-551M4 Low Noise

Enhancement Mode

Pseudomorphic HEMT in a

Miniature Leadless Package

Data Sheet

Features

• Very low noise figure and high

linearity

• Single Supply Enhancement Mode

Technology^[1]optimized for 3V

operation

• Excellent uniformity in product

specifications

Description

MiniPak 1.4 mm x 1.2 mm Package

Agilent Technologies’ ATF-551M4

is a high dynamic range, super

low noise, single supply

E-pHEMT GAAs FET housed in a

thin miniature leadless package.

• 400 micron gate width

• Thin miniature package

1.4 mm x 1.2 mm x 0.7 mm

• Tape-and-reel packaging option

available

The combination of small device

size, super low noise (under 1 dB

Fmin from 2 to 6 GHz), high

linearity and low power makes

the ATF-551M4 ideal for LNA or

hybrid module designs in wire-

less receiver in the 450 MHz to

10 GHz frequency band.

Pin Connections and

Package Marking

Specifications

• 2 GHz; 2.7V, 10 mA (typ.)

• 24.1 dBm output 3^rdorder intercept

Drain

Pin 4

Source

Pin 3

• 14.6 dBm output power at 1 dB gain

compression

Gate

Pin 2

Source

Pin 1

Applications include Cellular/

PCS/ WCDMA handsets and data

modem cards, fixed wireless

infrastructure in the 2.4, 3.5 GHz

and UNII frequency bands, as

well as 2.4 GHz 802.11b, 5 GHz

802.11a and HIPERLAN/2

• 0.5 dB noise figure

• 17.5 dB associated gain

Note:

Top View. Package marking provides orientation,

product identification and date code.

Applications

• Low Noise Amplifier for:

“V” = Device Type Code

– Cellular/PCS/WCDMA hand-

sets and modem cards

Wireless LAN PC-cards.

“x” = Date code character. A different

character is assigned for each month and

year.

– 2.4 GHz, 3.5 GHz and UNII fixed

wireless infrastructure

Note:

1. Agilent’s enhancement mode E-pHEMT

devices are the first commercially available

single-supply GaAs transistors that do not

need a negative gate bias voltage for

operation. They can help simplify the design

and reduce the cost of receivers and

transmitters in many applications in the

450 MHz to 10 GHz frequency range.

– 2.4 GHz 802.11b Wireless LAN

– 5 GHz 802.11a and HIPERLAN

Wireless LAN

•

General purpose discrete E-pHEMT

for other ultra low noise applications

12 3 4 5 6 7...24

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