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ATF-551M4-TR2

更新时间： 2024-11-30 21:54:35
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体晶体管放大器
页数 文件大小 规格书
24页 198K
描述
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package

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ATF-551M4-TR2 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：CHIP CARRIER, R-CBCC-N4针数：4
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.27其他特性：LOW NOISE
配置：SINGLE最小漏源击穿电压：5 V
最大漏极电流 (ID)：0.1 AFET 技术：HIGH ELECTRON MOBILITY
最高频带：X BANDJESD-30 代码：R-CBCC-N4
JESD-609代码：e0元件数量：1
端子数量：4工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：0.27 W最小功率增益 (Gp)：15.5 dB
认证状态：Not Qualified子类别：FET RF Small Signal
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

ATF-551M4-TR2 数据手册

 浏览型号ATF-551M4-TR2的Datasheet PDF文件第2页浏览型号ATF-551M4-TR2的Datasheet PDF文件第3页浏览型号ATF-551M4-TR2的Datasheet PDF文件第4页浏览型号ATF-551M4-TR2的Datasheet PDF文件第5页浏览型号ATF-551M4-TR2的Datasheet PDF文件第6页浏览型号ATF-551M4-TR2的Datasheet PDF文件第7页 
Agilent ATF-551M4 Low Noise  
Enhancement Mode  
Pseudomorphic HEMT in a  
Miniature Leadless Package  
Data Sheet  
Features  
• Very low noise figure and high  
linearity  
• Single Supply Enhancement Mode  
Technology[1] optimized for 3V  
operation  
• Excellent uniformity in product  
specifications  
Description  
MiniPak 1.4 mm x 1.2 mm Package  
Agilent Technologies’ ATF-551M4  
is a high dynamic range, super  
low noise, single supply  
E-pHEMT GAAs FET housed in a  
thin miniature leadless package.  
• 400 micron gate width  
• Thin miniature package  
1.4 mm x 1.2 mm x 0.7 mm  
• Tape-and-reel packaging option  
available  
The combination of small device  
size, super low noise (under 1 dB  
Fmin from 2 to 6 GHz), high  
linearity and low power makes  
the ATF-551M4 ideal for LNA or  
hybrid module designs in wire-  
less receiver in the 450 MHz to  
10 GHz frequency band.  
Pin Connections and  
Package Marking  
Specifications  
• 2 GHz; 2.7V, 10 mA (typ.)  
• 24.1 dBm output 3rd order intercept  
Drain  
Pin 4  
Source  
Pin 3  
• 14.6 dBm output power at 1 dB gain  
compression  
Vx  
Gate  
Pin 2  
Source  
Pin 1  
Applications include Cellular/  
PCS/ WCDMA handsets and data  
modem cards, fixed wireless  
infrastructure in the 2.4, 3.5 GHz  
and UNII frequency bands, as  
well as 2.4 GHz 802.11b, 5 GHz  
802.11a and HIPERLAN/2  
• 0.5 dB noise figure  
• 17.5 dB associated gain  
Note:  
Top View. Package marking provides orientation,  
product identification and date code.  
Applications  
• Low Noise Amplifier for:  
“V” = Device Type Code  
– Cellular/PCS/WCDMA hand-  
sets and modem cards  
Wireless LAN PC-cards.  
“x” = Date code character. A different  
character is assigned for each month and  
year.  
– 2.4 GHz, 3.5 GHz and UNII fixed  
wireless infrastructure  
Note:  
1. Agilent’s enhancement mode E-pHEMT  
devices are the first commercially available  
single-supply GaAs transistors that do not  
need a negative gate bias voltage for  
operation. They can help simplify the design  
and reduce the cost of receivers and  
transmitters in many applications in the  
450 MHz to 10 GHz frequency range.  
– 2.4 GHz 802.11b Wireless LAN  
– 5 GHz 802.11a and HIPERLAN  
Wireless LAN  
•
General purpose discrete E-pHEMT  
for other ultra low noise applications  
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