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ATF-58143-TR1 PDF预览

ATF-58143-TR1

更新时间: 2024-11-30 22:47:59
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
10页 150K
描述
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-58143-TR1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.11
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:5 V最大漏极电流 (ID):0.1 A
FET 技术:HIGH ELECTRON MOBILITY最高频带:C BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.5 W
最小功率增益 (Gp):15 dB认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

ATF-58143-TR1 数据手册

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Agilent ATF-58143 Low Noise  
Enhancement Mode  
Pseudomorphic HEMT in a  
Surface Mount Plastic Package  
Data Sheet  
Features  
• Low noise and high linearity  
performance  
• Enhancement Mode Technology[1]  
• Excellent uniformity in product  
specifications  
• Low cost surface mount small  
plastic package SOT-343 (4 lead  
SC-70) in Tape-and-Reel packaging  
option available  
Surface Mount Package  
SOT-343  
Description  
Agilent Technologies’s  
ATF-58143 is a high dynamic  
range, low noise E-PHEMT  
housed in a 4-lead SC-70  
(SOT-343) surface mount plastic  
package.  
• Lead-free option available  
Specifications  
2 GHz; 3V, 30 mA (Typ.)  
The combination of high gain,  
high linearity and low noise  
makes the ATF-58143 ideal as  
low noise amplifier for cellular/  
PCS/WCDMA base stations,  
wireless local loop, and other  
applications that require low  
noise and high linearity perfor-  
mance in the 450 MHz to 6 GHz  
frequency range.  
• 30.5 dBm output 3rd order intercept  
• 19 dBm output power at 1 dB  
• 0.5 dB noise figure  
Pin Connections and  
Package Marking  
DRAIN  
SOURCE  
GATE  
• 16.5 dB associated gain  
SOURCE  
Applications  
• Q1 LNA for cellular/PCS/WCDMA  
base stations  
Note:  
Top View. Package marking provides orientation  
and identification  
• Q1, Q2 LNA and Pre-driver  
amplifier for 3–4 GHz WLL  
“8F” = Device Code  
• Other low noise and high linearity  
applications at 450 MHz to 6 GHz  
“x” = Date code character  
identifies month of manufacture.  
Note:  
1. Enhancement mode technology requires  
positive Vgs, thereby eliminating the need for  
the negative gate voltage associated with  
conventional depletion mode devices.  
Attention:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  

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