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ATF-541M4

更新时间： 2024-12-01 04:07:23

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
16页	166K
描述
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package

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ATF-541M4 数据手册

Agilent ATF-541M4 Low Noise

Enhancement Mode

Pseudomorphic HEMT in a

Miniature Leadless Package

Data Sheet

Features

• High linearity performance

• Single Supply Enhancement Mode

Technology^[1]

• Very low noise figure

• Excellent uniformity in product

specifications

MiniPak 1.4 mm x 1.2 mm Package

Description

• 800 micron gate width

Agilent Technologies’s

ATF-541M4 is a high linearity,

low noise, single supply

E-PHEMT housed in a miniature

leadless package.

• Miniature leadless package

1.4 mm x 1.2 mm x 0.7 mm

• Tape-and-Reel packaging option

available

The ATF-541M4’s small size and

low profile makes it ideal for the

design of hybrid module and

other space-constraint devices.

Specifications

2 GHz; 3V, 60 mA (Typ.)

• 35.8 dBm output 3^rdorder intercept

Pin Connections and

Package Marking

• 21.4 dBm output power at 1 dB gain

compression

The device can be used in appli-

cations such as TMA and front

end LNA for Cellular/PCS and

WCDMA base stations, LNA and

driver amplifiers for Wireless

Data and 802.11b WLAN.

Drain

Pin 4

Source

Pin 3

• 0.5 dB noise figure

• 17.5 dB associated gain

Gate

Pin 2

Source

Pin 1

Applications

• Low Noise Amplifier and Driver

Amplifier for Cellular/PCS and

WCDMA Base Stations

Note:

In addition, the device’s superior

RF performance at higher

Top View. Package marking provides orientation,

product identification and date code.

frequency makes it an ideal

candidate for high frequency

applications such as WLL,

802.11a WLAN, 5–6 GHz UNII

and HIPERLAN applications.

• LNA and Driver Amplifier for

WLAN, WLL/RLL and MMDS

applications

“R” = Device Type Code

“x” = Date code character. A different

character is assigned for each month and

year.

•

General purpose discrete E-PHEMT

for ultra low noise applications in

the 450 MHz to 10 GHz frequency

range

Note:

1. Enhancement mode technology requires

positive Vgs, thereby eliminating the need for

the negative gate voltage associated with

conventional depletion mode devices.

12 3 4 5 6 7...16

中文翻译

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与ATF-541M4相关器件

型号	品牌	获取价格	描述	数据表
ATF-541M4-BLK	HP	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-BLK	AGILENT	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-BLKG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF-541M4-TR1	AGILENT	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-TR1	HP	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-TR1G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF-541M4-TR2	AGILENT	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-TR2	HP	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-TR2G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF543	POSEICO	获取价格	FAST SWITCHING THYRISTOR

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