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ATF-54143-TR1 PDF预览

ATF-54143-TR1

更新时间: 2024-11-30 22:47:59
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
16页 155K
描述
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-54143-TR1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:5 V
最大漏极电流 (Abs) (ID):0.12 A最大漏极电流 (ID):0.12 A
FET 技术:HIGH ELECTRON MOBILITY最高频带:C BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.725 W
最小功率增益 (Gp):15 dB认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

ATF-54143-TR1 数据手册

 浏览型号ATF-54143-TR1的Datasheet PDF文件第2页浏览型号ATF-54143-TR1的Datasheet PDF文件第3页浏览型号ATF-54143-TR1的Datasheet PDF文件第4页浏览型号ATF-54143-TR1的Datasheet PDF文件第5页浏览型号ATF-54143-TR1的Datasheet PDF文件第6页浏览型号ATF-54143-TR1的Datasheet PDF文件第7页 
Agilent ATF-54143 Low Noise  
Enhancement Mode  
Pseudomorphic HEMT in a  
Surface Mount Plastic Package  
Data Sheet  
Features  
• High linearity performance  
• Enhancement Mode Technology[1]  
• Low noise figure  
• Excellent uniformity in product  
specifications  
• 800 micron gate width  
Surface Mount Package  
Description  
SOT-343  
Agilent Technologies’s ATF-54143  
is a high dynamic range, low  
noise, E-PHEMT housed in a  
4-lead SC-70 (SOT-343) surface  
mount plastic package.  
• Low cost surface mount small  
plastic package SOT-343 (4 lead  
SC-70)  
• Tape-and-Reel packaging option  
available  
The combination of high gain,  
high linearity and low noise  
makes the ATF-54143 ideal for  
cellular/PCS base stations,  
MMDS, and other systems in the  
450 MHz to 6 GHz frequency  
range.  
Specifications  
2 GHz; 3 V, 60 mA (Typ.)  
Pin Connections and  
• 36.2 dBm output 3rd order intercept  
Package Marking  
• 20.4 dBm output power at 1 dB  
gain compression  
DRAIN  
SOURCE  
• 0.5 dB noise figure  
SOURCE  
GATE  
• 16.6 dB associated gain  
Note:  
Applications  
• Low noise amplifier for cellular/  
PCS base stations  
Top View. Package marking provides orientation  
and identification  
“4F” = Device Code  
• LNA for WLAN, WLL/RLL and  
MMDS applications  
“x” = Date code character  
identifies month of manufacture.  
• General purpose discrete E-PHEMT  
for other ultra low noise applications  
Note:  
1. Enhancement mode technology requires  
positive Vgs, thereby eliminating the need for  
the negative gate voltage associated with  
conventional depletion mode devices.  

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