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ATF-531P8

更新时间： 2024-11-30 21:54:19

品牌	Logo	应用领域
安捷伦 - AGILENT		PC
页数	文件大小	规格书
16页	143K
描述
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package

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ATF-531P8 数据手册

Agilent ATF-531P8 High Linearity

Enhancement Mode^[1]

Pseudomorphic HEMT in

2x2 mm²LPCC^[3]Package

Data Sheet

Features

• Single voltage operation

• High linearity and gain

• Low noise figure

Pin Connections and

Package Marking

Description

Agilent Technologies’s

• Excellent uniformity in product

specifications

ATF-531P8 is a single-voltage

high linearity, low noise

E-pHEMT housed in an 8-lead

JEDEC-standard leadless

plastic chip carrier (LPCC^[3])

package. The device is ideal as

a high linearity, low-noise,

medium-power amplifier. Its

operating frequency range is

from 50 MHz to 6 GHz.

• Small package size:

Pin 8

Pin 7 (Drain)

Pin 6

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

2.0 x 2.0 x 0.75 mm

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

Pin 5

Pin 4 (Source)

• Tape-and-reel packaging option

available

Bottom View

Pin 1 (Source)

Pin 8

Specifications

The thermally efficient package

measures only 2 mm x 2 mm x

0.75 mm. Its backside

2 GHz; 4V, 135 mA (Typ.)

Pin 2 (Gate)

Pin 3

Pin 7 (Drain)

Pin 6

3Px

• 38 dBm output IP3

• 0.6 dB noise figure

• 20 dB gain

metalization provides excellent

thermal dissipation as well as

visual evidence of solder reflow.

The device has a Point MTTF of

over 300 years at a mounting

temperature of +85°C. All

Pin 4 (Source)

Pin 5

Top View

Note:

• 10.7 dB LFOM^[4]

Package marking provides orientation and

identification:

• 24.5 dBm output power at 1 dB gain

compression

“3P” = Device Code

devices are 100% RF & DC tested.

“x” = Date code indicates the month of

manufacture.

Note:

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

Applications

• Front-end LNA Q1 and Q2 driver or

pre-driver amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

2. Refer to reliability datasheet for detailed

MTTF data.

3. Conforms to JEDEC reference outline MO229

for DRP-N

• Driver amplifier for WLAN,

WLL/RLL and MMDS applications

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

• General purpose discrete E-pHEMT

for other high linearity applications

12 3 4 5 6 7...16

中文翻译

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与ATF-531P8相关器件

型号	品牌	获取价格	描述	数据表
ATF-531P8-BLK	AGILENT	获取价格	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
ATF-531P8-BLKG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Elect
ATF-531P8-BLKG	AVAGO	获取价格	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC,
ATF-531P8-TR1	AGILENT	获取价格	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
ATF-531P8-TR1G	AVAGO	获取价格	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC,
ATF-531P8-TR2	AGILENT	获取价格	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
ATF-531P8-TR2G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Elect
ATF-531P8-TR2G	AVAGO	获取价格	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC,
ATF54143	AGILENT	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143	AVAGO	获取价格	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

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