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ATF-531P8-TR2G PDF预览

ATF-531P8-TR2G

更新时间： 2024-12-01 13:05:43
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器PC
页数 文件大小 规格书
16页 143K
描述
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8

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ATF-531P8-TR2G 技术参数

生命周期：Transferred零件包装代码：SON
包装说明：SMALL OUTLINE, S-PDSO-N8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.11其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：7 V最大漏极电流 (ID)：0.3 A
FET 技术：HIGH ELECTRON MOBILITY最高频带：C BAND
JEDEC-95代码：MO-229JESD-30 代码：S-PDSO-N8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：18.5 dB
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

ATF-531P8-TR2G 数据手册

 浏览型号ATF-531P8-TR2G的Datasheet PDF文件第2页浏览型号ATF-531P8-TR2G的Datasheet PDF文件第3页浏览型号ATF-531P8-TR2G的Datasheet PDF文件第4页浏览型号ATF-531P8-TR2G的Datasheet PDF文件第5页浏览型号ATF-531P8-TR2G的Datasheet PDF文件第6页浏览型号ATF-531P8-TR2G的Datasheet PDF文件第7页 
Agilent ATF-531P8 High Linearity  
Enhancement Mode[1]  
Pseudomorphic HEMT in  
2x2 mm2 LPCC[3] Package  
Data Sheet  
Features  
• Single voltage operation  
• High linearity and gain  
• Low noise figure  
Pin Connections and  
Package Marking  
Description  
Agilent Technologies’s  
• Excellent uniformity in product  
specifications  
ATF-531P8 is a single-voltage  
high linearity, low noise  
E-pHEMT housed in an 8-lead  
JEDEC-standard leadless  
plastic chip carrier (LPCC[3])  
package. The device is ideal as  
a high linearity, low-noise,  
medium-power amplifier. Its  
operating frequency range is  
from 50 MHz to 6 GHz.  
• Small package size:  
Pin 8  
Pin 7 (Drain)  
Pin 6  
Pin 1 (Source)  
Pin 2 (Gate)  
Pin 3  
2.0 x 2.0 x 0.75 mm  
• Point MTTF > 300 years[2]  
• MSL-1 and lead-free  
Pin 5  
Pin 4 (Source)  
• Tape-and-reel packaging option  
available  
Bottom View  
Pin 1 (Source)  
Pin 8  
Specifications  
The thermally efficient package  
measures only 2 mm x 2 mm x  
0.75 mm. Its backside  
2 GHz; 4V, 135 mA (Typ.)  
Pin 2 (Gate)  
Pin 3  
Pin 7 (Drain)  
Pin 6  
3Px  
• 38 dBm output IP3  
• 0.6 dB noise figure  
• 20 dB gain  
metalization provides excellent  
thermal dissipation as well as  
visual evidence of solder reflow.  
The device has a Point MTTF of  
over 300 years at a mounting  
temperature of +85°C. All  
Pin 4 (Source)  
Pin 5  
Top View  
Note:  
• 10.7 dB LFOM[4]  
Package marking provides orientation and  
identification:  
• 24.5 dBm output power at 1 dB gain  
compression  
“3P” = Device Code  
devices are 100% RF & DC tested.  
“x” = Date code indicates the month of  
manufacture.  
Note:  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
Applications  
• Front-end LNA Q1 and Q2 driver or  
pre-driver amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
2. Refer to reliability datasheet for detailed  
MTTF data.  
3. Conforms to JEDEC reference outline MO229  
for DRP-N  
• Driver amplifier for WLAN,  
WLL/RLL and MMDS applications  
4. Linearity Figure of Merit (LFOM) is essentially  
OIP3 divided by DC bias power.  
• General purpose discrete E-pHEMT  
for other high linearity applications  
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