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ATF-53189-TR1 PDF预览

ATF-53189-TR1

更新时间: 2024-12-01 12:28:39
品牌 Logo 应用领域
安华高科 - AVAGO 晶体小信号场效应晶体管射频小信号场效应晶体管
页数 文件大小 规格书
17页 502K
描述
Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Single voltage operation

ATF-53189-TR1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8Is Samacsys:N
Base Number Matches:1

ATF-53189-TR1 数据手册

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ATF-53189  
Enhancement Mode[1] Pseudomorphic HEMT  
in SOT 89 Package  
Data Sheet  
Description  
Features  
Single voltage operation  
High Linearity and Gain  
Low Noise Figure  
Avago Technologies’s ATF-53189 is a single-voltage high  
linearity, low noise E-pHEMT FET packaged in a low cost  
surface mount SOT89 package. The device is ideal as a  
high-linearity, low noise, medium-power amplifier. Its  
operating frequency range is from 50 MHz to 6 GHz.  
Excellent uniformity in product specifications  
SOT 89 standard package  
Point MTTF > 300 years[2]  
MSL-1 and lead-free  
ATF-53189 is ideally suited for Cellular/PCS and WCDMA  
wireless infrastructure, WLAN, WLL and MMDS application,  
and general-purpose discrete E-pHEMT amplifiers that  
require medium power and high linearity. All devices are  
100% RF and DC tested.  
Tape-and-Reel packaging option available  
Specifications  
Pin Connections and Package Marking  
2 GHz, 4.0V, 135 mA (Typ.)  
40.0 dBm Output IP3  
23.0 dBm Output Power at 1dB gain compression  
0.85 dB Noise Figure  
15.5 dB Gain  
3GX  
46% PAE at P1dB  
LFOM[3] 12.7 dB  
#1  
RFin  
#2  
#3  
RFout  
#3  
RFout  
#2  
#1  
RFin  
GND  
GND  
Applications  
Top View  
Bottom View  
Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli-  
fier for Cellular/PCS and WCDMA wireless infrastruc-  
ture  
Notes:  
Package marking provides orientation and identification:  
“3G” = Device Code  
“x” = Month code indicates the month of manufacture.  
D = Drain  
Driver Amplifier for WLAN, WLL/RLL and MMDS ap-  
plications  
S = Source  
G = Gate  
General purpose discrete E-pHEMT for other high  
linearity applications  
Notes:  
1. Enhancement mode technology employs a single positive Vgs,  
eliminating the need of negative gate voltage associated with  
conventional depletion mode devices.  
2. Refer to reliability datasheet for detailed MTTF data.  
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.  

ATF-53189-TR1 替代型号

型号 品牌 替代类型 描述 数据表
ATF-53189-BLK AVAGO

功能相似

Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Single voltage operation

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