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ATF-53189

更新时间： 2024-12-01 12:28:39

品牌	Logo	应用领域
安华高科 - AVAGO		/
页数	文件大小	规格书
17页	502K
描述
Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Single voltage operation

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中文翻译

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技术参数
数据手册

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ATF-53189 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.79
最大漏极电流 (Abs) (ID)：	0.3 A	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
功耗环境最大值：	1 W	子类别：	FET RF Small Signal
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

ATF-53189 数据手册

ATF-53189

Enhancement Mode^[1]Pseudomorphic HEMT

in SOT 89 Package

Data Sheet

Description

Features

• Single voltage operation

• High Linearity and Gain

• Low Noise Figure

Avago Technologies’s ATF-53189 is a single-voltage high

linearity, low noise E-pHEMT FET packaged in a low cost

surface mount SOT89 package. The device is ideal as a

high-linearity, low noise, medium-power ampliﬁer. Its

operating frequency range is from 50 MHz to 6 GHz.

• Excellent uniformity in product speciﬁcations

• SOT 89 standard package

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

ATF-53189 is ideally suited for Cellular/PCS and WCDMA

wireless infrastructure, WLAN, WLL and MMDS application,

and general-purpose discrete E-pHEMT ampliﬁers that

require medium power and high linearity. All devices are

100% RF and DC tested.

• Tape-and-Reel packaging option available

Speciﬁcations

Pin Connections and Package Marking

2 GHz, 4.0V, 135 mA (Typ.)

• 40.0 dBm Output IP3

• 23.0 dBm Output Power at 1dB gain compression

• 0.85 dB Noise Figure

• 15.5 dB Gain

3GX

• 46% PAE at P1dB

• LFOM^[3]12.7 dB

RFin

RFout

RFin

GND

Applications

Top View

Bottom View

• Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli-

ﬁer for Cellular/PCS and WCDMA wireless infrastruc-

ture

Notes:

Package marking provides orientation and identiﬁcation:

“3G” = Device Code

“x” = Month code indicates the month of manufacture.

D = Drain

• Driver Ampliﬁer for WLAN, WLL/RLL and MMDS ap-

plications

S = Source

G = Gate

• General purpose discrete E-pHEMT for other high

linearity applications

Notes:

1. Enhancement mode technology employs a single positive V_gs,

eliminating the need of negative gate voltage associated with

conventional depletion mode devices.

2. Refer to reliability datasheet for detailed MTTF data.

3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.

12 3 4 5 6 7...17

中文翻译

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与ATF-53189相关器件

型号	品牌	获取价格	描述	数据表
ATF-53189-BLK	AVAGO	获取价格	Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Single voltage operation
ATF-53189-BLKG	AVAGO	获取价格	RF SMALL SIGNAL, FET
ATF-53189-TR1	AVAGO	获取价格	Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Single voltage operation
ATF-53189-TR1G	AVAGO	获取价格	RF Small Signal Field-Effect Transistor,
ATF-531P8	AGILENT	获取价格	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
ATF-531P8-BLK	AGILENT	获取价格	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
ATF-531P8-BLKG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Elect
ATF-531P8-BLKG	AVAGO	获取价格	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC,
ATF-531P8-TR1	AGILENT	获取价格	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
ATF-531P8-TR1G	AVAGO	获取价格	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC,

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