Datasheet > ATF-52189-TR1

ATF-52189-TR1

更新时间： 2024-11-30 20:30:39

品牌	Logo	应用领域
安华高科 - AVAGO		/
页数	文件大小	规格书
19页	400K
描述
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE PACKAGE-3

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技术参数
数据手册

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ATF-52189-TR1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.8	Is Samacsys：	N
Base Number Matches：	1

ATF-52189-TR1 数据手册

ATF-52189

High Linearity Mode Enhancement

Pseudomorphic HEMT in SOT 89 Package

[1]

Data Sheet

Description

Features

Avago Technologies’s ATF-52189 is a single-voltage high • Single voltage operation

linearity, low noise E-pHEMT FET packaged in a low cost

surface mount SOT89 package. The device is ideal as a

medium-power, high-linearity ampliﬁer. Its operating fre-

• High Linearity and P1dB

• Low Noise Figure

quency range is from 50 MHz to 6 GHz.

• Excellent uniformity in product speciﬁcations

• SOT 89 standard package

ATF-52189 is ideally suited for Cellular/PCS and WCDMA

wireless infrastructure, WLAN, WLL and MMDS applica-

tion, and general purpose discrete E-pHEMT ampliﬁers

which require medium power and high linearity. All de-

vices are 100% RF and DC tested.

[2]

• Point MTTF > 300 years

• MSL-2 and lead-free

• Tape-and-Reel packaging option available

Speciﬁcations

2 GH, 4.5V, 280 mA (Typ.)

Notes:

1. Enhancement mode technology employs a single positive Vgs,

eliminating the need of negative gate voltage associated with

conventional depletion mode devices.

• 42 dBm Output IP3

• 27 dBm Output Power at 1dB gain compression

• 1.50 dB Noise Figure

• 16.0 dB Gain

2. Refer to reliability datasheet for detailed MTTF data

3. Conform to JEDEC reference outline MO229 for DRP-N

4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power

• 55% PAE at P1dB

[3]

Pin Connections and Package Marking

• LFOM 12.5 dB

Applications

• Front-end LNA Q2 and Q3, Driver or Pre-driver Ampliﬁer

for Cellular/PCS and WCDMA wireless infrastructure

2GX

• Driver Ampliﬁer for WLAN, WLL/RLL and MMDS

applications

RFin

RFout

RFin

• General purpose discrete E-pHEMT for other high

GND

linearity applications

Top View

Bottom View

Notes:

Package marking provides orientation and identiﬁcation:

“2G”= Device Code

“x”= Month code indicates the month of manufacture.

12 3 4 5 6 7...19

中文翻译

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与ATF-52189-TR1相关器件

型号	品牌	获取价格	描述	数据表
ATF-52189-TR1G	AVAGO	获取价格	RF SMALL SIGNAL, FET
ATF-521P8	AVAGO	获取价格	High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package
ATF-521P8-BLK	AVAGO	获取价格	High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package
ATF-521P8-BLKG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Elect
ATF-521P8-TR1	AVAGO	获取价格	High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package
ATF-521P8-TR1G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Elect
ATF-521P8-TR2	AVAGO	获取价格	High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package
ATF-521P8-TR2G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Elect
ATF524	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF524S16N	POSEICO	获取价格	FAST SWITCHING THYRISTOR

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