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ATF-52189-BLK PDF预览

ATF-52189-BLK

更新时间: 2024-11-30 20:30:39
品牌 Logo 应用领域
安华高科 - AVAGO 放大器晶体管
页数 文件大小 规格书
19页 400K
描述
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE PACKAGE-3

ATF-52189-BLK 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8Is Samacsys:N
其他特性:LOW NOISE外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:7 V
最大漏极电流 (Abs) (ID):0.5 A最大漏极电流 (ID):0.3 A
FET 技术:HIGH ELECTRON MOBILITY最高频带:C BAND
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:1.5 W最小功率增益 (Gp):14 dB
认证状态:Not Qualified子类别:FET RF Small Signals
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

ATF-52189-BLK 数据手册

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ATF-52189  
High Linearity Mode Enhancement  
Pseudomorphic HEMT in SOT 89 Package  
[1]  
Data Sheet  
Description  
Features  
Avago Technologies’s ATF-52189 is a single-voltage high Single voltage operation  
linearity, low noise E-pHEMT FET packaged in a low cost  
surface mount SOT89 package. The device is ideal as a  
medium-power, high-linearity amplifier. Its operating fre-  
High Linearity and P1dB  
Low Noise Figure  
quency range is from 50 MHz to 6 GHz.  
Excellent uniformity in product specifications  
SOT 89 standard package  
ATF-52189 is ideally suited for Cellular/PCS and WCDMA  
wireless infrastructure, WLAN, WLL and MMDS applica-  
tion, and general purpose discrete E-pHEMT amplifiers  
which require medium power and high linearity. All de-  
vices are 100% RF and DC tested.  
[2]  
Point MTTF > 300 years  
MSL-2 and lead-free  
Tape-and-Reel packaging option available  
Specifications  
2 GH, 4.5V, 280 mA (Typ.)  
Notes:  
1. Enhancement mode technology employs a single positive Vgs,  
eliminating the need of negative gate voltage associated with  
conventional depletion mode devices.  
42 dBm Output IP3  
27 dBm Output Power at 1dB gain compression  
1.50 dB Noise Figure  
16.0 dB Gain  
2. Refer to reliability datasheet for detailed MTTF data  
3. Conform to JEDEC reference outline MO229 for DRP-N  
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power  
55% PAE at P1dB  
[3]  
Pin Connections and Package Marking  
LFOM 12.5 dB  
Applications  
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier  
for Cellular/PCS and WCDMA wireless infrastructure  
2GX  
Driver Amplifier for WLAN, WLL/RLL and MMDS  
applications  
#1  
RFin  
#2  
#3  
RFout  
#3  
RFout  
#2  
#1  
RFin  
General purpose discrete E-pHEMT for other high  
GND  
GND  
linearity applications  
Top View  
Bottom View  
Notes:  
Package marking provides orientation and identification:  
“2G= Device Code  
“x= Month code indicates the month of manufacture.  

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