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ATF-511P8-TR1G PDF预览

ATF-511P8-TR1G

更新时间: 2024-01-02 11:35:53
品牌 Logo 应用领域
安捷伦 - AGILENT /
页数 文件大小 规格书
16页 140K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8

ATF-511P8-TR1G 技术参数

生命周期:Transferred零件包装代码:SON
包装说明:SMALL OUTLINE, R-PDSO-N8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.12Is Samacsys:N
其他特性:LOW NOISE外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:7 V
最大漏极电流 (ID):1 AFET 技术:HIGH ELECTRON MOBILITY
最高频带:C BANDJESD-30 代码:R-PDSO-N8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

ATF-511P8-TR1G 数据手册

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Agilent ATF-511P8 High Linearity  
Enhancement Mode[1]  
Pseudomorphic HEMT in  
2x2 mm2 LPCC[3] Package  
Data Sheet  
Features  
Single voltage operation  
High linearity and P1dB  
Low noise figure  
Pin Connections and  
Package Marking  
Description  
Agilent Technologies’s  
Excellent uniformity in product  
specifications  
ATF-511P8 is a single-voltage  
high linearity, low noise  
E-pHEMT housed in an 8-lead  
JEDEC-standard leadless  
plastic chip carrier (LPCC[3])  
package. The device is ideal as  
a high linearity, low-noise,  
medium-power amplifier. Its  
operating frequency range is  
from 50 MHz to 6 GHz.  
Small package size:  
Pin 8  
Pin 7 (Drain)  
Pin 6  
Pin 1 (Source)  
Pin 2 (Gate)  
Pin 3  
2.0 x 2.0 x 0.75 mm  
Point MTTF > 300 years[2]  
MSL-1 and lead-free  
Pin 5  
Pin 4 (Source)  
Tape-and-reel packaging option  
available  
Bottom View  
Pin 1 (Source)  
Pin 8  
Specifications  
The thermally efficient package  
measures only 2 mm x 2 mm x  
0.75 mm. Its backside  
2 GHz; 4.5V, 200 mA (Typ.)  
Pin 2 (Gate)  
Pin 3  
Pin 7 (Drain)  
Pin 6  
1Px  
41.7 dBm output IP3  
metalizationprovides excellent  
thermal dissipation as well as  
visual evidence of solder reflow.  
The device has a Point MTTF of  
over 300 years at a mounting  
temperature of +85°C. All  
30 dBm output power at 1 dB gain  
compression  
Pin 4 (Source)  
Pin 5  
Top View  
Note:  
1.4 dB noise figure  
14.8 dB gain  
Package marking provides orientation and  
identification:  
“1P” = Device Code  
12.1 dB LFOM[4]  
69% PAE  
devices are 100% RF & DC tested.  
“x” = Date code indicates the month of  
manufacture.  
Note:  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
Applications  
Front-end LNA Q2 and Q3 driver or  
pre-driver amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
2. Refer to reliability datasheet for detailed  
MTTF data.  
3. Conforms to JEDEC reference outline MO229  
for DRP-N.  
4. Linearity Figure of Merit (LFOM) is essentially  
OIP3 divided by DC bias power.  
Driver amplifier for WLAN,  
WLL/RLL and MMDS applications  
General purpose discrete E-pHEMT  
for other high linearity applications  

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