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ATF-52189-BLK PDF预览

ATF-52189-BLK

更新时间: 2024-09-20 22:41:03
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体晶体管放大器
页数 文件大小 规格书
14页 145K
描述
Enhancement Mode Pseudomorphic HEMT in SOT 89 Package

ATF-52189-BLK 数据手册

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Agilent ATF-53189 Enhancement  
Mode[1] Pseudomorphic HEMT  
in SOT 89 Package  
Data Sheet  
Features  
• Single voltage operation  
• High Linearity and Gain  
• Low Noise Figure  
• Excellent uniformity in product  
specifications  
• SOT 89 standard package  
Pin Connections and  
Package Marking  
Description  
Agilent Technologies’s  
• Point MTTF > 300 years[2]  
• MSL-1 and lead-free  
ATF-53189 is a single-voltage  
high linearity, low noise  
E-pHEMT FET packaged in a  
low cost surface mount SOT89  
package. The device is ideal as a  
high-linearity, low noise,  
medium-power amplifier. Its  
operating frequency range is  
from 50 MHz to 6 GHz.  
S
• Tape-and-Reel packaging option  
available  
3GX  
Specifications  
2 GHz, 4.0V, 135 mA (Typ.)  
G
S
D
• 40.0 dBm Output IP3  
Top View  
• 23.0 dBm Output Power at 1dB gain  
compression  
S
ATF-53189 is ideally suited for  
Cellular/PCS and WCDMA  
wireless infrastructure, WLAN,  
WLL and MMDS application, and  
general purpose discrete  
E-pHEMT amplifiers which  
require medium power and high  
linearity. All devices are 100% RF  
and DC tested.  
• 0.85 dB Noise Figure  
• 15.5 dB Gain  
• 46% PAE at P1dB  
• LFOM[3] 12.7 dB  
D
S
G
Bottom View  
Applications  
Notes:  
• Front-end LNA Q1 and Q2, Driver or  
Pre-driver Amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
Package marking provides orientation and  
identification:  
“3G” = Device Code  
“x” = Month code indicates the month of  
manufacture.  
• Driver Amplifier for WLAN, WLL/  
RLL and MMDS applications  
D = Drain  
S = Source  
G = Gate  
• General purpose discrete E-pHEMT  
for other high linearity applications  
Notes:  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
2. Refer to reliability datasheet for detailed  
MTTF data.  
3. Linearity Figure of Merit (LFOM) is OIP3  
divided by DC bias power.  

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