ATF-501P8-TR2G

更新时间： 2024-11-05 13:05:43

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安捷伦 - AGILENT		晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器 PC
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数据手册

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ATF-501P8-TR2G 数据手册

Agilent ATF-501P8 High Linearity

Enhancement Mode^[1]

Pseudomorphic HEMT in

2x2 mm²LPCC^[3]Package

Data Sheet

Features

• Single voltage operation

• High Linearity and P1dB

• Low Noise Figure

• Excellent uniformity in product

specifications

Pin Connections and

Package Marking

Description

Agilent Technologies’s ATF-

501P8 is a single-voltage high

linearity, low noise E-pHEMT

housed in an 8-lead JEDEC-

standard leadless plastic chip

carrier (LPCC^[3]) package. The

device is ideal as a medium-

power amplifier. Its operating

frequency range is from 400 MHz

to 3.9 GHz.

• Small package size: 2.0 x 2.0 x

0.75 mm³

Pin 8

Pin 7 (Drain)

Pin 6

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

• Tape-and-Reel packaging option

available

Pin 5

Pin 4 (Source)

Bottom View

Specifications

• 2 GHz; 4.5V, 280 mA (Typ.)

Pin 1 (Source)

Pin 8

The thermally efficient package

measures only 2mm x 2mm x

0.75mm. Its backside

metalization provides excellent

thermal dissipation as well as

visual evidence of solder reflow.

The device has a Point MTTF of

over 300 years at a mounting

temperature of +85ºC. All devices

are 100% RF & DC tested.

• 45.5 dBm Output IP3

Pin 2 (Gate)

Pin 3

Pin 7 (Drain)

Pin 6

• 29 dBm Output Power at 1dB gain

compression

0Px

• 1 dB Noise Figure

• 15 dB Gain

• 14.5 dB LFOM^[4]

Pin 4 (Source)

Pin 5

Top View

Note:

Package marking provides orientation and

identification:

• 65% PAE

• 23^oC/W thermal resistance

“0P” = Device Code

“x” = Date code indicates the month of

manufacture.

Notes:

Applications

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

• Front-end LNA Q2 and Q3, Driver or

Pre-driver Amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

2. Refer to reliability datasheet for detailed

MTTF data.

Attention:

• Driver Amplifier for WLAN, WLL/

RLL and MMDS applications

Observe precautions for

handling electrostatic

sensitive devices.

3. Conforms to JEDEC reference outline MO229

for DRP-N.

• General purpose discrete E-pHEMT

for other high linearity applications

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

ESD Machine Model (Class A)

ESD Human Body Model (Class 1B)

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

12 3 4 5 6 7...22

中文翻译

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与ATF-501P8-TR2G相关器件

型号	品牌	获取价格	描述	数据表
ATF-511P8	AGILENT	获取价格	High Linearity Enhancement Mode
ATF-511P8-BLK	AGILENT	获取价格	High Linearity Enhancement Mode
ATF-511P8-BLKG	AGILENT	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob
ATF-511P8-TR1	AGILENT	获取价格	High Linearity Enhancement Mode
ATF-511P8-TR1G	AGILENT	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob
ATF-511P8-TR2	AGILENT	获取价格	High Linearity Enhancement Mode
ATF-511P8-TR2G	AGILENT	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mob
ATF514	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF514S12A	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF515	POSEICO	获取价格	FAST SWITCHING THYRISTOR

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