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ATF-511P8-BLKG PDF预览

ATF-511P8-BLKG

更新时间： 2024-11-30 13:05:43
品牌 Logo 应用领域
安捷伦 - AGILENT /
页数 文件大小 规格书
16页 140K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8

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ATF-511P8-BLKG 技术参数

生命周期：Transferred零件包装代码：SON
包装说明：SMALL OUTLINE, R-PDSO-N8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.12其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：7 V最大漏极电流 (ID)：1 A
FET 技术：HIGH ELECTRON MOBILITY最高频带：C BAND
JESD-30 代码：R-PDSO-N8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

ATF-511P8-BLKG 数据手册

 浏览型号ATF-511P8-BLKG的Datasheet PDF文件第2页浏览型号ATF-511P8-BLKG的Datasheet PDF文件第3页浏览型号ATF-511P8-BLKG的Datasheet PDF文件第4页浏览型号ATF-511P8-BLKG的Datasheet PDF文件第5页浏览型号ATF-511P8-BLKG的Datasheet PDF文件第6页浏览型号ATF-511P8-BLKG的Datasheet PDF文件第7页 
Agilent ATF-511P8 High Linearity  
Enhancement Mode[1]  
Pseudomorphic HEMT in  
2x2 mm2 LPCC[3] Package  
Data Sheet  
Features  
• Single voltage operation  
• High linearity and P1dB  
• Low noise figure  
Pin Connections and  
Package Marking  
Description  
Agilent Technologies’s  
• Excellent uniformity in product  
specifications  
ATF-511P8 is a single-voltage  
high linearity, low noise  
E-pHEMT housed in an 8-lead  
JEDEC-standard leadless  
plastic chip carrier (LPCC[3])  
package. The device is ideal as  
a high linearity, low-noise,  
medium-power amplifier. Its  
operating frequency range is  
from 50 MHz to 6 GHz.  
• Small package size:  
Pin 8  
Pin 7 (Drain)  
Pin 6  
Pin 1 (Source)  
Pin 2 (Gate)  
Pin 3  
2.0 x 2.0 x 0.75 mm  
• Point MTTF > 300 years[2]  
• MSL-1 and lead-free  
Pin 5  
Pin 4 (Source)  
• Tape-and-reel packaging option  
available  
Bottom View  
Pin 1 (Source)  
Pin 8  
Specifications  
The thermally efficient package  
measures only 2 mm x 2 mm x  
0.75 mm. Its backside  
2 GHz; 4.5V, 200 mA (Typ.)  
Pin 2 (Gate)  
Pin 3  
Pin 7 (Drain)  
Pin 6  
1Px  
• 41.7 dBm output IP3  
metalizationprovides excellent  
thermal dissipation as well as  
visual evidence of solder reflow.  
The device has a Point MTTF of  
over 300 years at a mounting  
temperature of +85°C. All  
• 30 dBm output power at 1 dB gain  
compression  
Pin 4 (Source)  
Pin 5  
Top View  
Note:  
• 1.4 dB noise figure  
• 14.8 dB gain  
Package marking provides orientation and  
identification:  
“1P” = Device Code  
• 12.1 dB LFOM[4]  
• 69% PAE  
devices are 100% RF & DC tested.  
“x” = Date code indicates the month of  
manufacture.  
Note:  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
Applications  
• Front-end LNA Q2 and Q3 driver or  
pre-driver amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
2. Refer to reliability datasheet for detailed  
MTTF data.  
3. Conforms to JEDEC reference outline MO229  
for DRP-N.  
4. Linearity Figure of Merit (LFOM) is essentially  
OIP3 divided by DC bias power.  
• Driver amplifier for WLAN,  
WLL/RLL and MMDS applications  
• General purpose discrete E-pHEMT  
for other high linearity applications  
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