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ATF-501P8-TR2

更新时间： 2024-01-11 21:53:55
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器PC
页数 文件大小 规格书
22页 184K
描述
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

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ATF-501P8-TR2 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, S-PDSO-N8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.11Is Samacsys：N
其他特性：LOW NOISE外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：7 V
最大漏极电流 (Abs) (ID)：1 A最大漏极电流 (ID)：1 A
FET 技术：HIGH ELECTRON MOBILITY最高频带：L BAND
JEDEC-95代码：MO-229JESD-30 代码：S-PDSO-N8
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL功耗环境最大值：3.5 W
最小功率增益 (Gp)：13.5 dB认证状态：Not Qualified
子类别：FET RF Small Signal表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

ATF-501P8-TR2 数据手册

 浏览型号ATF-501P8-TR2的Datasheet PDF文件第2页浏览型号ATF-501P8-TR2的Datasheet PDF文件第3页浏览型号ATF-501P8-TR2的Datasheet PDF文件第4页浏览型号ATF-501P8-TR2的Datasheet PDF文件第5页浏览型号ATF-501P8-TR2的Datasheet PDF文件第6页浏览型号ATF-501P8-TR2的Datasheet PDF文件第7页 
Agilent ATF-501P8 High Linearity  
Enhancement Mode[1]  
Pseudomorphic HEMT in  
2x2 mm2 LPCC[3] Package  
Data Sheet  
Features  
• Single voltage operation  
• High Linearity and P1dB  
• Low Noise Figure  
• Excellent uniformity in product  
specifications  
Pin Connections and  
Package Marking  
Description  
Agilent Technologies’s ATF-  
501P8 is a single-voltage high  
linearity, low noise E-pHEMT  
housed in an 8-lead JEDEC-  
standard leadless plastic chip  
carrier (LPCC[3]) package. The  
device is ideal as a medium-  
power amplifier. Its operating  
frequency range is from 400 MHz  
to 3.9 GHz.  
• Small package size: 2.0 x 2.0 x  
0.75 mm3  
Pin 8  
Pin 7 (Drain)  
Pin 6  
Pin 1 (Source)  
Pin 2 (Gate)  
Pin 3  
• Point MTTF > 300 years[2]  
• MSL-1 and lead-free  
• Tape-and-Reel packaging option  
available  
Pin 5  
Pin 4 (Source)  
Bottom View  
Specifications  
• 2 GHz; 4.5V, 280 mA (Typ.)  
Pin 1 (Source)  
Pin 8  
The thermally efficient package  
measures only 2mm x 2mm x  
0.75mm. Its backside  
metalization provides excellent  
thermal dissipation as well as  
visual evidence of solder reflow.  
The device has a Point MTTF of  
over 300 years at a mounting  
temperature of +85ºC. All devices  
are 100% RF & DC tested.  
• 45.5 dBm Output IP3  
Pin 2 (Gate)  
Pin 3  
Pin 7 (Drain)  
Pin 6  
• 29 dBm Output Power at 1dB gain  
compression  
0Px  
• 1 dB Noise Figure  
• 15 dB Gain  
• 14.5 dB LFOM[4]  
Pin 4 (Source)  
Pin 5  
Top View  
Note:  
Package marking provides orientation and  
identification:  
• 65% PAE  
• 23oC/W thermal resistance  
“0P” = Device Code  
“x” = Date code indicates the month of  
manufacture.  
Notes:  
Applications  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
• Front-end LNA Q2 and Q3, Driver or  
Pre-driver Amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
2. Refer to reliability datasheet for detailed  
MTTF data.  
Attention:  
• Driver Amplifier for WLAN, WLL/  
RLL and MMDS applications  
Observe precautions for  
handling electrostatic  
sensitive devices.  
3. Conforms to JEDEC reference outline MO229  
for DRP-N.  
• General purpose discrete E-pHEMT  
for other high linearity applications  
4. Linearity Figure of Merit (LFOM) is essentially  
OIP3 divided by DC bias power.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 1B)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
1234567...22

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