Datasheet > APTGT150TA60PG-Module

APTGT150TA60PG-Module

更新时间： 2023-12-06 20:11:25

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	520K
描述
Configuration: Triple Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 150Silicon type: TRENCH 3 IGBT Package: SP6P

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APTGT150TA60PG-Module 数据手册

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APTGT150TA60PG

Triple phase leg

Trench + Field Stop IGBT3

Power Module

V_CES= 600V

I_C= 150A @ Tc = 80°C

Application

VBUS1

VBUS2

VBUS3

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Trench + Field Stop IGBT3Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

0/VBUS1

0/VBUS2

0/VBUS3

Low leakage current

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

Lead frames for power connections

•

High level of integration

Benefits

•

Stable temperature behavior

Very rugged

Solderable terminals for easy PCB mounting

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Very low (12mm) profile

Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

Module can be configured as a three phase bridge

Module can be configured as a boost followed by a

full bridge

•

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

225

150

350

±20

480

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_j= 150°C

RBSOA Reverse Bias Safe Operating Area

300A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

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