Datasheet > APTGT200A60T3AG-Module

APTGT200A60T3AG-Module

更新时间： 2023-12-06 20:08:06

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	311K
描述
Configuration: Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 200Silicon type: TRENCH 3 IGBT Package: SP3F

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中文翻译

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数据手册

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APTGT200A60T3AG-Module 数据手册

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APTGT200A60T3AG

Phase leg

Trench + Field Stop IGBT3

Power Module

V_CES= 600V

I_C= 200A @ Tc = 100°C

29 30 31 32

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

26 27 28

22 23 25

Features



Trench + Field Stop IGBT3

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Low leakage current

RBSOA and SCSOA rated



Very low stray inductance

Kelvin emitter for easy drive

Internal thermistor for temperature monitoring

AlN substrate for improved thermal performance

16 18 19 20

Benefits



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

RoHS Compliant

Pins 29/30/31/32 must be shorted together

Pins 26/27/28/22/23/25 must be shorted together

to achieve a phase leg

Pins 16/18/19/20 must be shorted together

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (Per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

600

Unit

V_CES

T_C= 25°C

T_C= 100°C

T_C= 25°C

290

200

400

±20

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

T_C= 25°C

T_j= 150°C

750

RBSOA Reverse Bias Safe Operating Area

400A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 – 6

www.microsemi.com

12 3 4 5 6

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