Datasheet > APTGT200DA120D3G-Module

APTGT200DA120D3G-Module

更新时间： 2023-12-06 20:02:30

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	536K
描述
Configuration: Boost chopperVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Silicon type: TRENCH 3 IGBT Package: D3

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数据手册

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APTGT200DA120D3G-Module 数据手册

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APTGT200DA120D3G

Boost chopper

Trench + Field Stop IGBT3

Power Module

V_CES= 1200V

I_C= 200A @ Tc = 80°C

Application



AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Features



Trench + Field Stop IGBT3Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated



Kelvin emitter for easy drive

High level of integration

M6 power connectors

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

300

200

400

±20

1050

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 125°C 400A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

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APTGT200DH120G-Module	MICROCHIP	获取价格	Configuration: Asymmetrical bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Sili