APTGT200DA60TG

更新时间： 2024-09-21 04:49:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
5页	257K
描述
Boost chopper Trench + Field Stop IGBT Power Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGT200DA60TG 数据手册

APTGT200DA60TG

V_CES= 600V

Boost chopper

Trench + Field Stop IGBT^®

Power Module

I_C= 200A @ Tc = 80°C

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

NT C2

VBUS

VBUS SENSE

CR1

Features

•

Trench + Field Stop IGBT^®Technology

Low voltage drop

Low tail current

OUT

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Very low stray inductance

NT C1

0/VBUS

Symmetrical design

Lead frames for power connections

•

High level of integration

Internal thermistor for temperature monitoring

Benefits

•

Stable temperature behavior

OUT

Very rugged

Solderable terminals for easy PCB mounting

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

OUT

VBUS

0/VBUS

NTC2

NTC1

VBUS

SENSE

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

290

200

400

±20

625

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_j= 150°C

RBSOA Reverse Bias Safe Operating Area

400A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 - 5

www.microsemi.com

12 3 4 5

中文翻译

下载PDF

与APTGT200DA60TG相关器件

型号	品牌	获取价格	描述	数据表
APTGT200DH120	ADPOW	获取价格	Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module
APTGT200DH120G	MICROSEMI	获取价格	Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module
APTGT200DH120G-Module	MICROCHIP	获取价格	Configuration: Asymmetrical bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Sili
APTGT200DH60G	MICROSEMI	获取价格	Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT200DH60G-Module	MICROCHIP	获取价格	Configuration: Asymmetrical bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 200Silic
APTGT200DU120	ADPOW	获取价格	Dual common source Fast Trench + Field Stop IGBT Power Module
APTGT200DU120G	MICROSEMI	获取价格	Dual common source Fast Trench + Field Stop IGBT Power Module
APTGT200DU120G-Module	MICROCHIP	获取价格	Configuration: Dual common sourceVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Silic
APTGT200DU60T	ADPOW	获取价格	Dual common source Trench + Field Stop IGBT Power Module
APTGT200DU60TG	MICROSEMI	获取价格	Dual common source Trench + Field Stop IGBT Power Module