Datasheet > APTGT200H120G-Module

APTGT200H120G-Module

更新时间： 2024-11-25 14:54:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	433K
描述
Configuration: Full bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Silicon type: TRENCH 3 IGBT Package: SP6C

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APTGT200H120G-Module 数据手册

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APTGT200H120G

V_CES= 1200V

I_C= 200A @ Tc = 80°C

Full - Bridge

Fast Trench + Field Stop IGBT3

Power Module

Application



Welding converters

VBUS

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

OUT1 OUT2



Fast Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

0/VBUS



Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors



High level of integration

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

280

200

400

±20

890

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 125°C 400A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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