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APTGT20H60T3G PDF预览

APTGT20H60T3G

更新时间: 2024-02-08 21:01:24
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
5页 265K
描述
Full - Bridge Trench + Field Stop IGBT Power Module

APTGT20H60T3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-X25针数:25
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:N其他特性:AVALANCHE RATED
外壳连接:ISOLATED最大集电极电流 (IC):32 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X25
JESD-609代码:e1湿度敏感等级:1
元件数量:4端子数量:25
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):62 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):310 ns标称接通时间 (ton):170 ns
VCEsat-Max:1.9 VBase Number Matches:1

APTGT20H60T3G 数据手册

 浏览型号APTGT20H60T3G的Datasheet PDF文件第2页浏览型号APTGT20H60T3G的Datasheet PDF文件第3页浏览型号APTGT20H60T3G的Datasheet PDF文件第4页浏览型号APTGT20H60T3G的Datasheet PDF文件第5页 
APTGT20H60T3G  
Full - Bridge  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 20A @ Tc = 80°C  
Application  
13 14  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
Q3  
CR1  
22  
CR3  
11  
10  
18  
19  
Features  
Trench + Field Stop IGBT® Technology  
7
8
-
-
-
-
-
-
-
-
Low voltage drop  
23  
Low tail current  
Q2  
29  
Q4  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
CR2  
CR4  
26  
27  
4
3
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
30  
31  
32  
Kelvin emitter for easy drive  
Very low stray inductance  
15  
16  
R1  
-
Symmetrical design  
High level of integration  
Internal thermistor for temperature monitoring  
28 27 26 25  
23 22  
20 19 18  
29  
16  
Benefits  
30  
15  
Stable temperature behavior  
Very rugged  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
Each leg can be easily paralleled to achieve a phase  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
leg of twice the current capability  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
V
VCES  
Collector - Emitter Breakdown Voltage  
600  
TC = 25°C  
32  
IC  
Continuous Collector Current  
A
TC = 80°C  
TC = 25°C  
20  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
40  
±20  
V
W
TC = 25°C  
TJ = 150°C  
Maximum Power Dissipation  
62  
RBSOA Reverse Bias Safe Operating Area  
40A @ 550V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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