Datasheet > APTGT25X120T3G-Module

APTGT25X120T3G-Module

更新时间： 2024-11-25 14:53:43

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	317K
描述
Configuration: Three Phase bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 25Silicon type: TRENCH 3 IGBT Package: SP6C

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APTGT25X120T3G-Module 数据手册

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APTGT25X120T3G

V_CES= 1200V

I_C= 25A @ Tc = 80°C

3 Phase bridge

Trench + Field Stop IGBT3

Power Module

Application



Motor control

Features



Trench + Field Stop IGBT3

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Low leakage current

RBSOA and SCSOA rated



Kelvin emitter for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

It is recommended to connect a decoupling capacitor

between pins 31 & 2 to reduce switching overvoltages, if DC

Power is connected between pins 15, 16 & 12.

Pins 15 & 16 must be shorted together.

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting



Low profile

RoHS compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (Per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

1200

±20

156

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

T_C= 25°C

T_j= 125°C

RBSOA Reverse Bias Safe Operation Area

50A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

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