是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X9 | 针数: | 10 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 2.17 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 430 A |
集电极-发射极最大电压: | 600 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X9 | 元件数量: | 2 |
端子数量: | 9 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 370 ns | 标称接通时间 (ton): | 180 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT300A60G-Module | MICROCHIP |
获取价格 |
Configuration: Phase legVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 300Silicon type: T | |
APTGT300A60TG | MICROSEMI |
获取价格 |
Phase leg Trench + Field Stop IGBT Power Module | |
APTGT300A60TG-Module | MICROCHIP |
获取价格 |
Configuration: Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 300Silicon type: T | |
APTGT300DA120D3 | ADPOW |
获取价格 |
Boost chopper Trench IGBT Power Module | |
APTGT300DA120G | ADPOW |
获取价格 |
Boost chopper Fast Trench + Field Stop IGBT Power Module | |
APTGT300DA120G | MICROSEMI |
获取价格 |
Boost chopper Fast Trench + Field Stop IGBT® | |
APTGT300DA120G-Module | MICROCHIP |
获取价格 |
Configuration: Boost chopperVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 300Silicon ty | |
APTGT300DA170 | ADPOW |
获取价格 |
Boost chopper Trench + Field Stop IGBT Power Module | |
APTGT300DA170D3 | ADPOW |
获取价格 |
Boost chopper Trench IGBT Power Module | |
APTGT300DA170D3G | MICROSEMI |
获取价格 |
Boost chopper Trench + Field Stop IGBT Power Module |