5秒后页面跳转
APTGT300DA170D3 PDF预览

APTGT300DA170D3

更新时间: 2024-02-07 07:16:34
品牌 Logo 应用领域
ADPOW 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
3页 197K
描述
Boost chopper Trench IGBT Power Module

APTGT300DA170D3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.14Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):530 A
集电极-发射极最大电压:1700 V配置:SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1470 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1200 ns标称接通时间 (ton):430 ns
VCEsat-Max:2.5 VBase Number Matches:1

APTGT300DA170D3 数据手册

 浏览型号APTGT300DA170D3的Datasheet PDF文件第2页浏览型号APTGT300DA170D3的Datasheet PDF文件第3页 
APTGT300DA170D3  
VCES = 1700V  
IC = 300A @ Tc = 80°C  
Boost chopper  
Trench IGBT® Power Module  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
3
Features  
Trench + Field Stop IGBT® Technology  
1
Q2  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
6
7
2
Kelvin emitter for easy drive  
Low stray inductance  
High level of integration  
Kelvin emitter for easy drive  
Low stray inductance  
3
2
1
-
M6 power connectors  
4
5
Benefits  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
7
6
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1700  
530  
300  
600  
±20  
1470  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Safe Operation Area  
600A@1600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 3  
APT website – http://www.advancedpower.com  

与APTGT300DA170D3相关器件

型号 品牌 获取价格 描述 数据表
APTGT300DA170D3G MICROSEMI

获取价格

Boost chopper Trench + Field Stop IGBT Power Module
APTGT300DA170D3G-Module MICROCHIP

获取价格

Configuration: Boost chopperVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 300Silicon type
APTGT300DA170G MICROSEMI

获取价格

Boost chopper Trench + Field Stop IGBT Power Module
APTGT300DA170G-Module MICROCHIP

获取价格

Configuration: Boost chopperVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 300Silicon type
APTGT300DA60D3G MICROSEMI

获取价格

Boost chopper Trench + Field Stop IGBT Power Module
APTGT300DA60D3G_11 MICROSEMI

获取价格

Boost chopper Trench + Field Stop IGBT3 Power Module
APTGT300DA60D3G-Module MICROCHIP

获取价格

Configuration: Boost chopperVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 300Silicon typ
APTGT300DA60G MICROSEMI

获取价格

Boost chopper Trench + Field Stop IGBT Power Module
APTGT300DA60G-Module MICROCHIP

获取价格

Configuration: Boost chopperVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 300Silicon typ
APTGT300DH60 ADPOW

获取价格

Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-8