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APTGT300A60D3G-Module PDF预览

APTGT300A60D3G-Module

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 540K
描述
Configuration: Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 300Silicon type: TRENCH 3 IGBT Package: D3

APTGT300A60D3G-Module 数据手册

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APTGT300A60D3G  
Phase leg  
Trench + Field Stop IGBT3  
Power Module  
VCES = 600V  
IC = 300A @ Tc = 80°C  
Application  
Welding converters  
3
Q1  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
4
5
Features  
1
Q2  
Trench + Field Stop IGBT3Technology  
6
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
7
2
Low leakage current  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
High level of integration  
M6 power connectors  
Benefits  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
400  
300  
600  
±20  
940  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Safe Operating Area  
600A @ 520V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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