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APTGT200DA120G PDF预览

APTGT200DA120G

更新时间: 2024-11-09 04:49:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
5页 244K
描述
Boost chopper Fast Trench + Field Stop IGBT Power Module

APTGT200DA120G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
其他特性:AVALANCHE RATED外壳连接:ISOLATED
最大集电极电流 (IC):280 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X5
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):610 ns标称接通时间 (ton):340 ns
Base Number Matches:1

APTGT200DA120G 数据手册

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APTGT200DA120G  
Boost chopper  
Fast Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 200A @ Tc = 80°C  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
VBUS  
CR1  
Features  
Fast Trench + Field Stop IGBT® Technology  
OUT  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Q2  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
G2  
Low leakage current  
E2  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
VBUS  
0/VBUS  
OUT  
Benefits  
Stable temperature behavior  
Very rugged  
E2  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
G2  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
280  
200  
400  
±20  
890  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 400A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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