Datasheet > APTGT150TA60PG-Module

APTGT150TA60PG-Module

更新时间： 2023-12-06 20:11:25

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	520K
描述
Configuration: Triple Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 150Silicon type: TRENCH 3 IGBT Package: SP6P

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APTGT150TA60PG-Module 数据手册

APTGT150TA60PG

Thermal and package characteristics

Symbol Characteristic

Min Typ Max Unit

IGBT

Diode

0.31

0.52

R_thJC

Junction to Case Thermal Resistance

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

Operating junction temperature range

Storage Temperature Range

V_ISOL

T_J

T_STG

T_C

4000

-40

175

125

100

°C

Operating Case Temperature

Torque Mounting torque

Wt Package Weight

To heatsink

N.m

250

SP6-P Package outline (dimensions in mm)

See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com

3 - 6

www.microsemi.com

1 234 5 6

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型号	品牌	获取价格	描述	数据表
APTGT150TDU60P	ADPOW	获取价格	Triple Dual Common Source Trench + Field Stop IGBT Power Module
APTGT150TDU60PG	MICROSEMI	获取价格	Triple Dual Common Source Trench + Field Stop IGBT Power Module
APTGT150TDU60PG-Module	MICROCHIP	获取价格	Configuration: Triple Dual common sourceVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 15
APTGT150TL60G	MICROSEMI	获取价格	Three level inverter Trench + Field Stop IGBT Power Module
APTGT150TL60G-Module	MICROCHIP	获取价格	Configuration: Three level inverterVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 150Sili
APTGT150X120E3G	ADPOW	获取价格	3 Phase bridge Trench + Field Stop IGBT Power Module
APTGT200A120	ADPOW	获取价格	Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT200A120D3	ADPOW	获取价格	Phase leg Trench IGBT Power Module
APTGT200A120D3G	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT200A120D3G-Module	MICROCHIP	获取价格	Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Silicon type: