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APTGT200A120G PDF预览

APTGT200A120G

更新时间: 2024-02-13 00:25:13
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
5页 245K
描述
Phase leg Fast Trench + Field Stop IGBT Power Module

APTGT200A120G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X7
针数:7Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.46
Is Samacsys:N其他特性:AVALANCHE RATED
外壳连接:ISOLATED最大集电极电流 (IC):280 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X7JESD-609代码:e1
湿度敏感等级:1元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):610 ns
标称接通时间 (ton):340 nsBase Number Matches:1

APTGT200A120G 数据手册

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APTGT200A120G  
Phase leg  
Fast Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 200A @ Tc = 80°C  
Application  
Welding converters  
VBUS  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
G1  
E1  
Features  
OUT  
Fast Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Q2  
Low tail current  
G2  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
E2  
Low leakage current  
0/VBUS  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
G1  
VBUS  
0/VBUS  
OUT  
Benefits  
E1  
Stable temperature behavior  
Very rugged  
E2  
G2  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
280  
200  
400  
±20  
890  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 400A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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