Datasheet > APTGT200A120D3G-Module

APTGT200A120D3G-Module

更新时间： 2023-12-06 20:11:12

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	546K
描述
Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Silicon type: TRENCH 3 IGBT Package: D3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGT200A120D3G-Module 数据手册

浏览型号APTGT200A120D3G-Module的Datasheet PDF文件第2页

浏览型号APTGT200A120D3G-Module的Datasheet PDF文件第3页

浏览型号APTGT200A120D3G-Module的Datasheet PDF文件第4页

APTGT200A120D3G

Phase leg

Trench + Field Stop IGBT3

Power Module

V_CES= 1200V

I_C= 200A @ Tc = 80°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



Trench + Field Stop IGBT3Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated



Kelvin emitter for easy drive

High level of integration

M6 power connectors

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

300

200

400

±20

1050

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 125°C 400A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

1 - 6

www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APTGT200A120D3G-Module相关器件

型号	品牌	获取价格	描述	数据表
APTGT200A120G	MICROSEMI	获取价格	Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT200A120G-Module	MICROCHIP	获取价格	Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 200Silicon type:
APTGT200A170D3	ADPOW	获取价格	Phase leg Trench IGBT Power Module
APTGT200A170D3G	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT200A170D3G-Module	MICROCHIP	获取价格	Configuration: Phase legVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 200Silicon type: TR
APTGT200A60T	ADPOW	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT200A60T3AG	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT200A60T3AG-Module	MICROCHIP	获取价格	Configuration: Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 200Silicon type: T
APTGT200A60TG	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT200DA120D3	ADPOW	获取价格	Boost chopper Trench IGBT Power Module