Datasheet > APT46GA90JD40

APT46GA90JD40

更新时间： 2024-11-25 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
9页	239K
描述
High Speed PT IGBT

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数据手册

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APT46GA90JD40 数据手册

APT46GA90JD40

900V

High Speed PT IGBT

POWER MOS 8^®is a high speed Punch-Through switch-mode IGBT. Low E_offis achieved

-2

through leading technology silicon design and lifetime control processes. A reduced E_off

V_CE(ON)tradeoff results in superior efﬁciency compared to other IGBT technologies. Low

gate charge and a greatly reduced ratio of C_res/C_iesprovide excellent noise immunity, short

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

"UL Recognized"

file # E145592

ISOTOP^®

APT46GA90JD40

Combi (IGBT and Diode)

FEATURES

TYPICAL APPLICATIONS

• Fast switching with low EMI

• Very Low E_offfor maximum efﬁciency

• Ultra low C_resfor improved noise immunity

• Low conduction loss

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• Low gate charge

• UPS, solar, and other inverters

• High frequency, high efﬁciency industrial

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Ratings

Unit

Collector Emitter Voltage

900

V_ces

I_C1

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 100°C

Pulsed Collector Current ¹

I_C2

I_CM

136

V_GE

Gate-Emitter Voltage ²

±30

P_D

Total Power Dissipation @ T_C= 25°C

Switching Safe Operating Area @ T_J= 150°C

Operating and Storage Junction Temperature Range

284

SSOA

T_J, T_STG

136A @ 900V

-55 to 150

°C

Static Characteristics

Symbol Parameter

T = 25°C unless otherwise speciﬁed

Test Conditions

Min

Typ

Max

Unit

V_BR(CES)

Collector-Emitter Breakdown Voltage

V_GE= 0V, I_C= 1.0mA

900

T_J= 25°C

T_J= 125°C

2.5

2.2

4.5

3.1

V_GE= 15V,

I_C= 47A

V_CE(on)

V_GE(th)

I_CES

Collector-Emitter On Voltage

Gate Emitter Threshold Voltage

Zero Gate Voltage Collector Current

Gate-Emitter Leakage Current

V_GE=V_CE, I_C= 1mA

T_J= 25°C

350

V_CE= 900V,

V_GE= 0V

μA

T_J= 125°C

1500

±100

I_GES

V_GS= ±30V

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7...9

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