型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT4M100K | MICROSEMI |
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Power Field-Effect Transistor, 4.6A I(D), 1200V, 4ohm, 1-Element, N-Channel, Silicon, Meta | |
APT4M120K | MICROSEMI |
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N-Channel MOSFET | |
APT4SC60K | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 4A, 600V V(RRM) | |
APT50-101DN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22.5A I(D) | CHIP | |
APT5010B2 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2FLC | ADPOW |
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暂无描述 | |
APT5010B2FLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2FLL_04 | ADPOW |
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POWER MOS 7 FREDFET | |
APT5010B2FLLG | MICROSEMI |
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010B2LC | ADPOW |
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Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo |