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APT5010JLLU2 PDF预览

APT5010JLLU2

更新时间: 2024-11-25 08:33:27
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 467K
描述
ISOTOP Boost chopper MOSFET Power Module

APT5010JLLU2 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4Reach Compliance Code:unknown
风险等级:5.63Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1600 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):41 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):164 A
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT5010JLLU2 数据手册

 浏览型号APT5010JLLU2的Datasheet PDF文件第2页浏览型号APT5010JLLU2的Datasheet PDF文件第3页浏览型号APT5010JLLU2的Datasheet PDF文件第4页浏览型号APT5010JLLU2的Datasheet PDF文件第5页浏览型号APT5010JLLU2的Datasheet PDF文件第6页浏览型号APT5010JLLU2的Datasheet PDF文件第7页 
APT5010JLLU2  
VDSS = 500V  
ISOTOP® Boost chopper  
RDSon = 100mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 41A @ Tc = 25°C  
K
Application  
Sꢁ AC and DC motor control  
Sꢁ Switched Mode Power Supplies  
Sꢁ Power Factor Correction  
Sꢁ Brake switch  
D
Features  
Sꢁ Power MOS 7® MOSFETs  
-
-
-
-
-
-
Low RDSon  
G
Low input and Miller capacitance  
Low gate charge  
Fast intrinsic reverse diode  
Avalanche energy rated  
Very rugged  
S
Sꢁ ISOTOP® Package (SOT-227)  
Sꢁ Very low stray inductance  
Sꢁ High level of integration  
K
S
Benefits  
Sꢁ Outstanding performance at high frequency operation  
Sꢁ Direct mounting to heatsink (isolated package)  
Sꢁ Low junction to case thermal resistance  
Sꢁ Very rugged  
D
G
Sꢁ Low profile  
ISOTOP  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
ID  
Drain - Source Breakdown Voltage  
Continuous Drain Current  
500  
41  
V
Tc = 25°C  
Tc = 80°C  
A
30  
IDM  
VGS  
Pulsed Drain current  
164  
±30  
100  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
mꢀ  
W
RDSon  
PD  
Maximum Power Dissipation  
Tc = 25°C  
Tc = 80°C  
378  
IAR  
Avalanche current (repetitive and non repetitive)  
41  
50  
A
EAR  
Repetitive Avalanche Energy  
mJ  
EAS  
IFAV  
IFRMS  
Single Pulse Avalanche Energy  
1600  
30  
Maximum Average Forward Current  
Duty cycle=0.5  
A
RMS Forward Current (Square wave, 50% duty)  
39  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 7  
APT website – http://www.advancedpower.com  

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