型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5010B2FLLG | MICROSEMI |
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010B2LC | ADPOW |
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Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo | |
APT5010B2LL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2LL | MICROSEMI |
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Power MOS 7 is a new generation of low loss, high voltage, N-Channel | |
APT5010B2LL_04 | ADPOW |
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POWER MOS 7 MOSFET | |
APT5010B2LLG | MICROSEMI |
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010B2VFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010B2VFRG | MICROSEMI |
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Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010B2VR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010B2VRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |