APT5010B2LL

更新时间： 2024-11-25 12:55:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
5页	2088K
描述
Power MOS 7 is a new generation of low loss, high voltage, N-Channel

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APT5010B2LL 数据手册

APT5010B2LL(G)

APT5010LLL(G)

500V 46A 0.100Ω

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

B2LL

POWER MOS 7 MOSFET

T-MAX™

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-264

LLL

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg

• Popular T-MAX™ or TO-264 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5010B2LL_LLL(G) UNIT

V_DSS

I_D

Drain-Source Voltage

500

Volts

Continuous Drain Current @ T_C= 25°C

Amps

I_DM

Pulsed Drain Current

184

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

Volts

±40

Watts

W/°C

520

P_D

4.0

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1600

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

500

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 23A)

0.100

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 500V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 400V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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与APT5010B2LL相关器件

型号	品牌	获取价格	描述	数据表
APT5010B2LL_04	ADPOW	获取价格	POWER MOS 7 MOSFET
APT5010B2LLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT5010B2VFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5010B2VFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT5010B2VR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5010B2VRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT5010DN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 50A I(D) \| CHIP
APT5010FN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 50A I(D) \| SIP-TAB
APT5010JFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5010JFLL_04	ADPOW	获取价格	POWER MOS 7 FREDFET

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