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APT5010B2LL PDF预览

APT5010B2LL

更新时间: 2024-02-25 07:35:33
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关脉冲
页数 文件大小 规格书
5页 2088K
描述
Power MOS 7 is a new generation of low loss, high voltage, N-Channel

APT5010B2LL 数据手册

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APT5010B2LL(G)  
APT5010LLL(G)  
500V 46A 0.100Ω  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
R
B2LL  
POWER MOS 7 MOSFET  
T-MAX™  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
TO-264  
LLL  
D
S
• Lower Input Capacitance  
• Increased Power Dissipation  
• Lower Miller Capacitance • Easier To Drive  
G
• Lower Gate Charge, Qg  
• Popular T-MAX™ or TO-264 Package  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT5010B2LL_LLL(G) UNIT  
VDSS  
ID  
Drain-Source Voltage  
500  
46  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
1
IDM  
Pulsed Drain Current  
184  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
Volts  
±40  
Watts  
W/°C  
520  
PD  
4.0  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
50  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
1600  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
500  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 23A)  
0.100  
100  
500  
±100  
5
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
IDSS  
µA  
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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