是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | ISOTOP |
包装说明: | FLANGE MOUNT, R-XUFM-X4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.23 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 1600 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 41 A | 最大漏极电流 (ID): | 41 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XUFM-X4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 378 W | 最大脉冲漏极电流 (IDM): | 164 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5010JLLU3-Module | MICROCHIP |
获取价格 |
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery | |
APT5010JN | ADPOW |
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT5010JVFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010JVRU2 | MICROSEMI |
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ISOTOP Boost chopper MOSFET Power Module | |
APT5010JVRU2 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010JVRU2-Module | MICROCHIP |
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MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery | |
APT5010JVRU3 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010JVRU3 | MICROSEMI |
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ISOTOP Buck chopper MOSFET Power Module | |
APT5010JVRU3-Module | MICROCHIP |
获取价格 |
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery |