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APT5010JLLU3

更新时间: 2024-11-25 03:51:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 458K
描述
ISOTOP Buck chopper MOSFET Power Module

APT5010JLLU3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:ISOTOP
包装说明:FLANGE MOUNT, R-XUFM-X4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.23其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1600 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):41 A最大漏极电流 (ID):41 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):378 W最大脉冲漏极电流 (IDM):164 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT5010JLLU3 数据手册

 浏览型号APT5010JLLU3的Datasheet PDF文件第2页浏览型号APT5010JLLU3的Datasheet PDF文件第3页浏览型号APT5010JLLU3的Datasheet PDF文件第4页浏览型号APT5010JLLU3的Datasheet PDF文件第5页浏览型号APT5010JLLU3的Datasheet PDF文件第6页浏览型号APT5010JLLU3的Datasheet PDF文件第7页 
APT5010JLLU3  
VDSS = 500V  
ISOTOP® Buck chopper  
RDSon = 100mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 41A @ Tc = 25°C  
D
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Features  
G
Power MOS 7® MOSFETs  
-
-
-
-
-
-
Low RDSon  
S
Low input and Miller capacitance  
Low gate charge  
Fast intrinsic reverse diode  
Avalanche energy rated  
Very rugged  
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
A
A
S
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Very rugged  
D
G
Low profile  
RoHS Compliant  
ISOTOP  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
500  
V
Tc = 25°C  
Tc = 80°C  
41  
30  
164  
±30  
100  
378  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
PD  
Pulsed Drain current  
Gate - Source Voltage  
V
m  
W
Drain - Source ON Resistance  
Maximum Power Dissipation  
Tc = 25°C  
Tc = 80°C  
IAR  
Avalanche current (repetitive and non repetitive)  
41  
50  
A
EAR  
Repetitive Avalanche Energy  
mJ  
EAS  
Single Pulse Avalanche Energy  
1600  
30  
IFAV  
IFRMS  
Maximum Average Forward Current  
Duty cycle=0.5  
A
RMS Forward Current (Square wave, 50% duty)  
39  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 7  
www.microsemi.com  

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