Datasheet > APT5010JVRU3-Module

APT5010JVRU3-Module

更新时间： 2024-09-11 14:55:23

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	467K
描述
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe

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APT5010JVRU3-Module 数据手册

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APT5010JVRU3

V_DSS= 500V

R_DSon= 100m max @ Tj = 25°C

I_D= 44A @ Tc = 25°C

ISOTOP^®Buck chopper

MOSFET Power Module

Application

AC and DC motor control



Switched Mode Power Supplies

Features



Power MOS V^®MOSFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic diode

Avalanche energy rated

Very rugged



ISOTOP^®Package (SOT-227)

Very low stray inductance

High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Very rugged

Low profile

RoHS Compliant

ISOTOP^

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

500

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

176

±30

100

m

P_D

Maximum Power Dissipation

T_c= 25°C

Tc = 80°C

450

I_AR

E_AR

E_AS

IF_AV

IF_RMS

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Maximum Average Forward Current

RMS Forward Current (Square wave, 50% duty)

2500

Duty cycle=0.5

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 – 8

www.microsemi.com

12 3 4 5 6 7 8

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