型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5014B2LC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement | |
APT5014B2VFR | ADPOW |
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POWER MOS V FREDFET | |
APT5014B2VFR | MICROSEMI |
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Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
APT5014B2VFRG | MICROSEMI |
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Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
APT5014B2VR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5014B2VR | MICROSEMI |
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Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
APT5014B2VRG | MICROSEMI |
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Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
APT5014BFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5014BFLL_04 | ADPOW |
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POWER MOS 7 FREDFET | |
APT5014BFLLG | MICROSEMI |
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Power Field-Effect Transistor, 35A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met |