是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PUFM-X4 | Reach Compliance Code: | unknown |
风险等级: | 5.63 | Is Samacsys: | N |
其他特性: | HIGH VOLTAGE | 雪崩能效等级(Eas): | 2500 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 44 A |
最大漏极电流 (ID): | 44 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PUFM-X4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 450 W |
最大脉冲漏极电流 (IDM): | 176 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5010JVRU2 | MICROSEMI |
获取价格 |
ISOTOP Boost chopper MOSFET Power Module | |
APT5010JVRU2 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010JVRU2-Module | MICROCHIP |
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MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery | |
APT5010JVRU3 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5010JVRU3 | MICROSEMI |
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ISOTOP Buck chopper MOSFET Power Module | |
APT5010JVRU3-Module | MICROCHIP |
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MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery | |
APT5010LFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010LFLLG | MICROSEMI |
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010LLC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement | |
APT5010LLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |