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APT5010JVRU2 PDF预览

APT5010JVRU2

更新时间: 2024-09-10 03:19:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 408K
描述
ISOTOP Boost chopper MOSFET Power Module

APT5010JVRU2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:ISOTOP
包装说明:FLANGE MOUNT, R-XUFM-X4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.2Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):2500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):44 A
最大漏极电流 (ID):44 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):450 W
最大脉冲漏极电流 (IDM):176 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT5010JVRU2 数据手册

 浏览型号APT5010JVRU2的Datasheet PDF文件第2页浏览型号APT5010JVRU2的Datasheet PDF文件第3页浏览型号APT5010JVRU2的Datasheet PDF文件第4页浏览型号APT5010JVRU2的Datasheet PDF文件第5页浏览型号APT5010JVRU2的Datasheet PDF文件第6页浏览型号APT5010JVRU2的Datasheet PDF文件第7页 
APT5010JVRU2  
VDSS = 500V  
ISOTOP® Boost chopper  
RDSon = 100mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 44A @ Tc = 25°C  
K
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Brake switch  
D
Features  
Power MOS V® MOSFETs  
-
-
-
-
-
-
Low RDSon  
G
Low input and Miller capacitance  
Low gate charge  
Fast intrinsic diode  
Avalanche energy rated  
Very rugged  
S
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
K
S
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Very rugged  
D
G
Low profile  
RoHS Compliant  
ISOTOP  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
500  
V
Tc = 25°C  
Tc = 80°C  
44  
33  
176  
±30  
100  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
m  
W
PD  
IAR  
EAR  
EAS  
IFAV  
IFRMS  
Maximum Power Dissipation  
Tc = 25°C  
Tc = 80°C  
450  
Avalanche current (repetitive and non repetitive)  
44  
50  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
2500  
30  
Maximum Average Forward Current  
Duty cycle=0.5  
A
RMS Forward Current (Square wave, 50% duty)  
39  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 7  
www.microsemi.com  

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