型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5010B2LLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |
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APT5010B2VFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT5010B2VFRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |
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APT5010B2VR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT5010B2VRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |
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APT5010DN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 50A I(D) | CHIP |
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APT5010FN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 50A I(D) | SIP-TAB |
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APT5010JFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT5010JFLL_04 | ADPOW |
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POWER MOS 7 FREDFET |
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APT5010JLC | ADPOW |
获取价格 |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement |
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