APT5010B2FLC

更新时间： 2024-02-13 23:00:24

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APT5010B2FLC 数据手册

APT5010B2FLL

APT5010LFLL

500V 46A 0.100W

FREDFET

POWER MOS 7

B2FLL

Power MOS 7^TMis a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^TMby significantly lowering R_DS(ON)

and Q_g. Power MOS 7^TMcombines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

T-MAX™

TO-264

LFLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular T-MAX™ or TO-264 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5010

500

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

184

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

500

Watts

W/°C

P_D

4.0

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1800

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

500

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.100

250

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

中文翻译

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与APT5010B2FLC相关器件

型号	品牌	获取价格	描述	数据表
APT5010B2FLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5010B2FLL_04	ADPOW	获取价格	POWER MOS 7 FREDFET
APT5010B2FLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT5010B2LC	ADPOW	获取价格	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo
APT5010B2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5010B2LL	MICROSEMI	获取价格	Power MOS 7 is a new generation of low loss, high voltage, N-Channel
APT5010B2LL_04	ADPOW	获取价格	POWER MOS 7 MOSFET
APT5010B2LLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT5010B2VFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5010B2VFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta

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