是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
其他特性: | FAST SWITCHING, AVALANCHE RATED | 最小漏源击穿电压: | 1200 V |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT4M120K | MICROSEMI |
获取价格 |
N-Channel MOSFET | |
APT4SC60K | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 4A, 600V V(RRM) | |
APT50-101DN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22.5A I(D) | CHIP | |
APT5010B2 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2FLC | ADPOW |
获取价格 |
暂无描述 | |
APT5010B2FLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2FLL_04 | ADPOW |
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POWER MOS 7 FREDFET | |
APT5010B2FLLG | MICROSEMI |
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010B2LC | ADPOW |
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Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo | |
APT5010B2LL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |