5秒后页面跳转
APT4M100K PDF预览

APT4M100K

更新时间: 2024-02-21 18:20:32
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关晶体管
页数 文件大小 规格书
2页 432K
描述
Power Field-Effect Transistor, 4.6A I(D), 1200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, 3 PIN

APT4M100K 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.76
其他特性:FAST SWITCHING, AVALANCHE RATED最小漏源击穿电压:1200 V
最大漏极电流 (ID):4.6 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT4M100K 数据手册

 浏览型号APT4M100K的Datasheet PDF文件第2页 
TM  
Power MOS 8™ is a new family of high speed, high voltage N-channel switch-
power transistors with lower EMI characteristics and lower cost compared to p
ous generation devices. These new MOSFETs /FREDFETs have been optimize
both hard and soft switching in high frequency, high voltage applications rated a
500W. FREDFETs have a fast recovery body diode characteristic, providing
commutation dv/dt ruggedness and high reliability in ZVS circuits.  
FEATURES  
TYPICAL APP
• Fast Switching  
• Low Gate Charge  
• Lower Cost  
• Avalanche Energy Rated  
• RoHS Compliant  
• Low EMI  
• PFC and other boost
• Buck converter  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra Low Crss for Improved Noise Immunity  
• Inverters  
BVdss  
Volts  
RDS(on)  
Ohms  
ID (Cont)  
Amps  
MOSFET  
Part Number  
FREDFET  
Part Number  
Package  
Style  
Sample  
Date  
Jan-07  
Jan-07  
Feb-07  
Jan-07  
Dec-06  
Nov-06  
Sept-06  
Sep-06  
Dec-06  
Dec-06  
Dec-06  
Dec-06  
Oct-06  
Oct-06  
Jan-07  
Jan-07  
Jan-07  
Jan-07  
Jan-07  
Dec-06  
Jan-07  
Jan-07  
Dec-06  
Nov-06  
Sep-06  
Sep-06  
Dec-06  
Sep-06  
Dec-06  
Sep-06  
Dec-06  
Dec-06  
Oct-06  
Oct-06  
4.60  
4.00  
2.90  
2.50  
1.40  
1.20  
.80  
4.2  
4.6  
6.6  
7.1  
13  
14  
22  
24  
26  
17  
28  
19  
32  
34  
5.4  
5.8  
7.3  
7.7  
8.7  
9.3  
14  
14  
17  
18  
29  
19  
34  
31  
22  
21  
37  
25  
41  
45  
APT4F120K  
TO-220  
APT4M100K  
APT7M120B  
APT14M120B  
APTM24M120L  
TO-220  
APT7F120B  
APT13F120B  
APT22F120L  
TO-247 or D3  
TO-247 or D3  
TO-247 or D3  
TO-247 or D3  
TO-264 or T-MAX®  
TO-264 or T-MAX®  
TO-264 or T-MAX®  
SOT-227  
1200  
.68  
.65  
APT26F120L  
APT17F120J  
.65  
.56  
APT28M120L  
APT19M120J  
TO-264 or T-MAX®  
SOT-227  
.56  
.35  
APT32F120J  
APT5F100K  
APT7F100B  
APT9F100B  
APT14F100B  
APT17F100B  
SOT-227  
.30  
APT34M120J  
APT6M100K  
APT8M100B  
APT9M100B  
APT14M100B  
APT18M100B  
SOT-227  
2.90  
2.50  
2.00  
1.80  
1.70  
1.50  
1.00  
0.90  
0.80  
0.70  
0.46  
0.46  
0.40  
0.40  
0.40  
0.40  
0.33  
0.33  
0.21  
0.18  
TO-220  
TO-220  
TO-247 or D3  
TO-247 or D3  
TO-247 & D3  
TO-247 or D3  
TO-247 or D3  
TO-247 or D3  
TO-247 or D3  
TO-247 or D3  
TO-264 or T-MAX®  
SOT-227  
1000  
APT29F100L  
APT19F100J  
APT34F100L  
TO-264 or T-MAX®  
TO-264 or T-MAX®  
SOT-227  
APT31M100L  
APT22F100J  
APT21M100J  
APT37M100L  
APT25M100J  
SOT-227  
TO-264 or TO-T-MAX®  
SOT-227  
APT41F100J  
SOT-227  
APT45M100J  
SOT-227  

与APT4M100K相关器件

型号 品牌 获取价格 描述 数据表
APT4M120K MICROSEMI

获取价格

N-Channel MOSFET
APT4SC60K MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 4A, 600V V(RRM)
APT50-101DN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22.5A I(D) | CHIP
APT5010B2 ADPOW

获取价格

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5010B2FLC ADPOW

获取价格

暂无描述
APT5010B2FLL ADPOW

获取价格

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5010B2FLL_04 ADPOW

获取价格

POWER MOS 7 FREDFET
APT5010B2FLLG MICROSEMI

获取价格

Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT5010B2LC ADPOW

获取价格

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo
APT5010B2LL ADPOW

获取价格

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po